Transition-metal dichalcogenide heterobilayers offer attractive opportunities to realize lattices of interacting bosons with several degrees of freedom. Such heterobilayers can feature moiré patterns that modulate their electronic band structure, leading to spatial confinement of single interlayer excitons (IXs) that act as quantum emitters with $C_3$ symmetry. However, the narrow emission linewidths of the quantum emitters contrast with a broad ensemble IX emission observed in nominally identical heterobilayers, opening a debate regarding the origin of IX emission. Here we report the continuous evolution from a few trapped IXs to an ensemble of IXs with both triplet- and singlet-spin configurations in a gate-tunable $2H\text{−}{\mathrm{MoSe}}_2/{\mathrm{WSe}}_2$ heterobilayer. We observe signatures of dipolar interactions in the IX ensemble regime which, when combined with magneto-optical spectroscopy, reveal that the narrow quantum-dot-like and broad ensemble emission originate from IXs trapped in moiré potentials with the same atomic registry. Finally, electron doping leads to the formation of three different species of localized negative trions with contrasting spin-valley configurations, among which we observe both intervalley and intravalley IX trions with spin-triplet optical transitions. Our results identify the origin of IX emission in ${\mathrm{MoSe}}_2/{\mathrm{WSe}}_2$ heterobilayers and highlight the important role of exciton-exciton interactions and Fermi-level control in these highly tunable quantum materials.

中文翻译：

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电荷可调 WSe2/MoSe2 异双层中的莫尔陷阱夹层 Trions

过渡金属二硫属化物异质双层为实现具有多个自由度的相互作用玻色子的晶格提供了有吸引力的机会。这种异质双层可以以莫尔条纹为特征，调节其电子能带结构，导致作为量子发射器的单层间激子 (IX) 的空间限制$C_3$对称。然而，量子发射器的窄发射线宽与在名义上相同的异质双层中观察到的宽集合 IX 发射形成对比，引发了关于 IX 发射起源的争论。在这里，我们报告了从几个被困 IX 到具有三重态和单重态自旋配置的 IX 集合的连续演化$2H\text{-}{钼}_2/{\mathrm{WSe}}_2$异质双层。我们观察到 IX 系综体系中偶极相互作用的特征，当与磁光光谱结合时，表明窄的量子点状和宽的系综发射源自被困在具有相同原子登记的莫尔电位中的 IX。最后，电子掺杂导致形成三种不同种类的具有对比自旋谷构型的局部负离子，其中我们观察到具有自旋三重态光学跃迁的间隔和谷内 IX 离子。我们的结果确定了 IX 排放的起源${钼}_2/{\mathrm{WSe}}_2$ 异质双层并强调激子-激子相互作用和费米能级控制在这些高度可调的量子材料中的重要作用。