Photochromic Semiconductors with Record-High Dielectric Permittivity Gain at Room Temperature,ACS Applied Electronic Materials

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Photochromic Semiconductors with Record-High Dielectric Permittivity Gain at Room Temperature
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2021-08-11 , DOI: 10.1021/acsaelm.1c00494
Cai Sun ₁ , Ming-Sheng Wang ₂ , Guo-Cong Guo ₂

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Bistable-state dielectric properties without maintaining external stimuli after switching are highly desirable for nonvolatile memory devices; however, research on switchable dielectric materials was mostly limited to the stimulation-constant mode. This work reports a record-high dielectric permittivity gain through the bistable-state modulation mode in two photochromic semiconductors (PSCs), and reveals the general structure characteristic and intrinsic physical reasons for the increase of dielectric permittivity. This discovery will guide the design for switchable dielectric materials with dielectric permittivity gain in the future.

中文翻译：

在室温下具有创纪录的高介电常数增益的光致变色半导体

非易失性存储器件非常需要开关后不保持外部刺激的双稳态介电特性；然而，对可切换介电材料的研究主要限于刺激恒定模式。这项工作报告了通过两种光致变色半导体 (PSC) 中的双稳态调制模式获得了创纪录的介电常数增益，并揭示了介电常数增加的一般结构特征和内在物理原因。这一发现将指导未来具有介电常数增益的可切换介电材料的设计。

更新日期：2021-08-24

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