Transfer printing of high mobility inorganic nanostructures, using an elastomeric transfer stamp, is a potential route for high-performance printed electronics. Using this method to transfer nanostructures with high yield, uniformity and excellent registration over large area remain a challenge. Herein, we present the ‘direct roll transfer’ as a single-step process, i.e., without using any elastomeric stamp, to print nanoribbons (NRs) on different substrates with excellent registration (retaining spacing, orientation, etc.) and transfer yield (∼95%). The silicon NR based field-effect transistors printed using direct roll transfer consistently show high performance i.e., high on-state current (Ion) >1 mA, high mobility (μ_eff) >600 cm²/Vs, high on/off ratio (I_on/_off) of around 10⁶, and low hysteresis (<0.4 V). The developed versatile and transformative method can also print nanostructures based on other materials such as GaAs and thus could pave the way for direct printing of high-performance electronics on large-area flexible substrates.

使用弹性体转移印章转移印刷高迁移率无机纳米结构是高性能印刷电子产品的潜在途径。使用这种方法在大面积上以高产率、均匀性和出色的配准转移纳米结构仍然是一个挑战。在这里，我们将“直接辊转移”作为一个单步过程，即不使用任何弹性印模，在不同的基材上印刷纳米带（NRs），并具有出色的配准（保留间距、取向等）和转移产量（～ 95%）。使用直接辊转移印刷的基于硅 NR 的场效应晶体管始终表现出高性能，即高导通电流 (Ion) >1 mA，高迁移率 ( μ _eff ) >600 cm ²/Vs、大约 10 ^{6 的}高开/关比 ( I _on / _off )和低滞后 (<0.4 V)。开发的多功能和变革性方法还可以打印基于其他材料（如 GaAs）的纳米结构，从而可以为在大面积柔性基板上直接打印高性能电子设备铺平道路。