We describe a 2×6 bit Cartesian RF in-phase and quadrature (IQ)-modulator, implemented on 0.15 mm2 in 22-mm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. Measurements show a 3-dB bandwidth of 17-24-GHz and saturated output power of 10.4 dBm with a peak drain efficiency of 15.6%. The IQ-modulator has been verified up to 8 GS/s. To the best of our knowledge, this is the highest-frequency CMOS RF IQ-modulator using sub-50%-duty-cycle local oscillator (LO) signals, and the highest sample rate reported for >3 bit fully integrated Cartesian IQ-modulators.

中文翻译：

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采用 22-nm FDSOI CMOS 的 2 × 6b 8 GS/s 17–24-GHz I/Q 基于 RF-DAC 的发射器

我们描述了一个 $2\times 6$ 位笛卡尔射频同相和正交 (IQ) 调制器，采用22 毫米全耗尽绝缘体上硅 (FDSOI) CMOS 技术在 0.15 毫米 ²上实现。测量结果显示 3-dB 带宽为 17-24-GHz，饱和输出功率为 10.4 dBm，峰值漏极效率为 15.6%。IQ 调制器经验证高达 8 GS/s。据我们所知，这是使用低于 50% 占空比本地振荡器 (LO) 信号的最高频率 CMOS RF IQ 调制器，以及 >3 位完全集成笛卡尔 IQ 调制器报告的最高采样率.