This letter presents a 230-GHz high-gain amplifier implemented in a 0.13- μm SiGe BiCMOS technology. The amplifier consists of a single-ended cascode (CC) stage for noise optimization and two differential CC stages for power capacity consideration. A symmetrical peripheral interconnection with self-shielded bypass capacitors for gm-boosting technique realization is employed to overcome the low inherent gain. The noise components of CC transistors are investigated and a parallel-inductor-based noise reduction technique is adopted to improve the noise figure (NF). The proposed amplifier provides a measured gain of 21.8-dB at 232 GHz with a 3-dB bandwidth of 35 GHz and a simulated NF of 10.5 dB at 230 GHz. The measured output power and maximum power-added efficiency (PAE) at 225 GHz is 3.5 dBm and 2.9%, respectively. The amplifier occupies a small area of 0.154 mm2 and consumes a moderate power of 66 mW. Remarkable performances including gain, NF, bandwidth, and output power enable the amplifier to be adopted as either a low noise amplifier (LNA) or a driver amplifier in the sub-terahertz (sub-THz) receivers.

中文翻译：

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适用于亚太赫兹接收器的具有 21.8dB 增益和 3dBm 输出功率的 230GHz SiGe 放大器


这封信介绍了采用 0.13 μm SiGe BiCMOS 技术实现的 230 GHz 高增益放大器。该放大器由一个用于噪声优化的单端共源共栅 (CC) 级和两个用于考虑功率容量的差分 CC 级组成。采用具有自屏蔽旁路电容器的对称外围互连来实现 gm 升压技术，以克服固有增益较低的问题。研究了 CC 晶体管的噪声成分，并采用基于并联电感器的降噪技术来改善噪声系数 (NF)。所提出的放大器在 232 GHz 时提供 21.8 dB 的测量增益，在 35 GHz 时具有 3 dB 带宽，在 230 GHz 时模拟 NF 为 10.5 dB。 225 GHz 下测得的输出功率和最大功率附加效率 (PAE) 分别为 3.5 dBm 和 2.9%。该放大器占地面积小，仅为 0.154 mm2，功耗适中，为 66 mW。该放大器具有增益、噪声系数、带宽和输出功率等卓越性能，可用作亚太赫兹 (sub-THz) 接收器中的低噪声放大器 (LNA) 或驱动放大器。