Antiperovskite manganese nitride compounds possess the saturation characteristics of the mean free path at an approximate room temperature. Therefore, such compounds show a flat resistance–temperature curve at an approximate room temperature. In this paper, we propose a manganese nitride resistor for high-thermal-stability systems. We fabricated and evaluated the micro/nanoscale manganese nitride compound resistors using the complementary metal-oxide-semiconductor-compatible process. The thermal coefficient of the fabricated manganese nitride compound resistor was as low as that of other near-zero temperature-coefficient of resistivity materials. These results indicate that manganese nitride compounds can achieve higher thermal stability.

反钙钛矿氮化锰化合物在近似室温下具有平均自由程的饱和特性。因此，此类化合物在近似室温下显示出平坦的电阻-温度曲线。在本文中，我们提出了一种用于高热稳定性系统的氮化锰电阻器。我们使用互补金属氧化物半导体兼容工艺制造和评估了微/纳米级氮化锰复合电阻器。所制造的氮化锰复合电阻器的热系数与其他电阻率接近零的材料一样低。这些结果表明，氮化锰化合物可以获得更高的热稳定性。