当前位置: X-MOL 学术Int. J. Electron. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
A low voltage class-F-1 power amplifier based on bias circuit analysis
International Journal of Electronics ( IF 1.1 ) Pub Date : 2021-10-14 , DOI: 10.1080/00207217.2021.1966659
Mani Dargahi Fadaee 1 , Farzin Shama 1 , Mohammad Saeed Feali 1 , Hamed Abbasi 1
Affiliation  

ABSTRACT

This paper aims to design and fabricate a class-F−1 power amplifier (PA) to act at 2.4 GHz frequency with high power-added efficiency (PAE). For this purpose, a harmonic control network is introduced, which consists of three parts: a harmonic control circuit, a transistor bias circuit, and a suppression circuit. Each part of the harmonic control network is individually designed and finally, they are optimised together in the final amplifier circuit. The fabricated PA results mimic the simulation one. The presented PA has functional specifications like high PAE, the ability to control the second and third harmonics, and a low drain voltage supply of 2.2 V. Due to these excellent features, this PA is suitable for wireless applications.



中文翻译:

基于偏置电路分析的低压F-1类功率放大器

摘要

本文旨在设计和制造一种 F -1类功率放大器 (PA),以在 2.4 GHz 频率下工作,并具有高功率附加效率 (PAE)。为此,介绍了一种谐波控制网络,它由谐波控制电路、晶体管偏置电路和抑制电路三部分组成。谐波控制网络的每个部分都是单独设计的,最后在最终放大器电路中一起优化。制造的 PA 结果模拟了模拟结果。所展示的 PA 具有高 PAE、控制二次和三次谐波的能力以及 2.2 V 的低漏极电压电源等功能规格。由于这些出色的特性,该 PA 适用于无线应用。

更新日期:2021-10-14
down
wechat
bug