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Microscopic Characterization of Poly(Sulfur Nitride)
Macromolecular Chemistry and Physics ( IF 2.5 ) Pub Date : 2021-08-08 , DOI: 10.1002/macp.202100113 Elkin Amado 1 , Nazmul Hasan 1 , Karsten Busse 1 , Jörg Kressler 1
Macromolecular Chemistry and Physics ( IF 2.5 ) Pub Date : 2021-08-08 , DOI: 10.1002/macp.202100113 Elkin Amado 1 , Nazmul Hasan 1 , Karsten Busse 1 , Jörg Kressler 1
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The morphology of poly(sulfur nitride) (SNx) in bulk crystals and in thin films is investigated by grazing incidence wide-angle X-ray scattering (GI WAXS) and atomic force microscopy (AFM). SNx crystals are grown in S2N2 crystals by topochemical solid-state polymerization and thin SNx films are prepared by sublimation/repolymerization of SNx or by mechanical deformation of crystals onto silicon substrates. Details of the crystallographic orientation of two different thin films are observed by GI WAXS. PeakForce Tunneling (PF-TUNA) atomic force microscopy provides information on the electrical conductivity of SNx crystal together with its morphology in the nm range. The current–voltage (I–V) curves show ohmic behavior indicating the metallic nature of SNx.
中文翻译：
聚（氮化硫）的显微表征
通过掠入射广角 X 射线散射 (GI WAXS) 和原子力显微镜 (AFM) 研究了块状晶体和薄膜中聚（氮化硫）（SN x）的形态。SN X晶体在S生长2 Ñ 2个晶体通过局部化学固态聚合和薄SN X膜通过SN的升华/再聚合制备X或通过晶体的机械变形在硅基底上。通过 GI WAXS 观察两种不同薄膜的晶体取向的细节。PeakForce Tunneling (PF-TUNA) 原子力显微镜可提供有关 SN x电导率的信息晶体及其在纳米范围内的形态。电流-电压 ( I – V ) 曲线显示欧姆行为，表明 SN x的金属性质。
更新日期：2021-09-21
中文翻译：
聚（氮化硫）的显微表征
通过掠入射广角 X 射线散射 (GI WAXS) 和原子力显微镜 (AFM) 研究了块状晶体和薄膜中聚（氮化硫）（SN x）的形态。SN X晶体在S生长2 Ñ 2个晶体通过局部化学固态聚合和薄SN X膜通过SN的升华/再聚合制备X或通过晶体的机械变形在硅基底上。通过 GI WAXS 观察两种不同薄膜的晶体取向的细节。PeakForce Tunneling (PF-TUNA) 原子力显微镜可提供有关 SN x电导率的信息晶体及其在纳米范围内的形态。电流-电压 ( I – V ) 曲线显示欧姆行为，表明 SN x的金属性质。
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