CuCoO₂ crystallizing in the delafossite structure was prepared by co-precipitation/hydrothermal method at low temperature (~ 150 °C). It is stable in air up to ~400 °C beyond which it turns into the spinel. The oxide has a direct optical transition attributed to the crystal field splitting of Cu⁺, linearly coordinated. It exhibits p-type behavior due to O²⁻ insertion in the layered lattice. Such property is corroborated by a cathodic photocurrent in the intensity-potential (J – E) plot and a negative slope of the capacitance potential (C⁻²– E) plot. The latter traced in NaOH (0.01 M) electrolyte, exhibits a straight line from which a flat band potential of +0.411 V and a hole density of 6.9 × 10²³ m⁻³ were extracted. An exchange current density of 7.36 μA cm⁻²and a polarizarion resistance (6.69 kΩ cm²), derived from the semi-logarithmic curve (log(J) – E), indicate a good electrochemical stability with a medium hysteresis loop and a low H₂-over potential. The anisotropy of the 2 D dimensional crystal structure allows reversible oxygen insertion in the (0 0 n) planes evidenced from the (J – E) profiles. The Electrochemical Impedance Spectroscopy (EIS) measurements give two well-distinguished depressive semicircles in the dark. The diameter of the semicircle at high frequencies (1.49 kΩ cm²) decreases down to (1.28 kΩ cm²) under irradiation, a behavior typical of a non-degenerate semi conductivity of CuCoO₂.

在铜铁矿结构中结晶的CuCoO ₂是在低温（~ 150 °C）下通过共沉淀/水热法制备的。它在高达 ~400 °C 的空气中稳定，超过此温度会变成尖晶石。由于Cu ⁺的晶体场分裂，氧化物具有直接的光学跃迁，线性配位。由于层状晶格中的O ^2-插入，它表现出p型行为。强度-电位 ( J – E ) 图中的阴极光电流和电容电位 ( C ^-2 – E ) 的负斜率证实了这种特性） 阴谋。后者在 NaOH (0.01 M) 电解质中追踪，显示出一条直线，从中提取出+0.411 V 的平带电位和 6.9 × 10 ²³  m ^-3的空穴密度。7.36 μA cm ^-2的交换电流密度和源自半对数曲线 (log( J ) – E )的极化电阻 (6.69 kΩ cm ² )表明良好的电化学稳定性，具有中等滞后回线和低H _{2 过}电位。二维晶体结构的各向异性允许在 ( 0 0 n ) 平面中可逆的氧插入从 ( J – E) 个人资料。电化学阻抗谱 (EIS) 测量在黑暗中给出了两个清晰可辨的抑郁半圆。高频下的半圆直径 (1.49 kΩ cm ² )在辐照下减小到 (1.28 kΩ cm ² )，这是 CuCoO ₂非退化半导电性的典型行为。