Abstract

Ga- doped ZnO films and Ga-Al co - doped ZnO films were prepared on glass and Si substrates by sol - gel spin coating. The crystal structure of the sample film was characterized by X-ray diffractometer (XRD), the surface morphology of the film was measured by scanning electron microscope (SEM), the optical properties were investigated by UV-vis spectrophotometer, and the luminescence properties were analyzed by photoluminescence spectrum (PL spectrum).In the experiment on the effect of Ga doping amount on ZnO thin film, Ga doping did not change the structure of ZnO hexagonal wurtzite. A proper amount of Ga will make the grain of the film grow optimally along the c-axis, the grain size becomes smaller, and the film surface becomes smoother and smoother. When Ga doping amount is 3 at%, the film has the best preferred orientation, the most uniform grain growth, and the highest transmittance in the visible region. The effect of Al doping amount on Ga-Al co—doped ZnO thin films was investigated in this paper. The doping amount of Ga was controlled as 3at%, and the doping amount of Al was 0.5 at%, 1.0 at%, 1.5 at%, 2.0 at%, and 2.5 at%. It was found that the addition of an appropriate amount of Al ion would make the grain grow along the horizontal direction, reduce the grain gap on the surface of the film, make the surface smooth and smooth, and improve the crystallization and optical properties of the film. When Ga doping amount is 3.0 at% and Al doping amount is 2.0 at%, the average transmittance of the film in the visible light region is the highest (92%) and the forbidden band width is the largest (about 3.95 ev). At this time, the near-band emission peak of the film is the strongest and the defect luminescence peak is the weakest.

摘要

采用溶胶-凝胶旋涂法在玻璃和Si衬底上制备了Ga掺杂ZnO薄膜和Ga-Al共掺杂ZnO薄膜。用X射线衍射仪(XRD)对样品薄膜的晶体结构进行表征，用扫描电子显微镜(SEM)测量薄膜的表面形貌，用紫外-可见分光光度计研究其光学性能，发光性能通过通过光致发光光谱（PL光谱）分析。在Ga掺杂量对ZnO薄膜影响的实验中，Ga掺杂没有改变ZnO六方纤锌矿的结构。适量的Ga会使薄膜晶粒沿c轴最佳生长，晶粒尺寸变小，薄膜表面越来越光滑。Ga掺杂量为3at%时，薄膜的择优取向最佳，晶粒生长最均匀，可见光区透过率最高。本文研究了Al掺杂量对Ga-Al共掺杂ZnO薄膜的影响。Ga的掺杂量控制为3at%，Al的掺杂量为0.5at%、1.0at%、1.5at%、2.0at%和2.5at%。发现加入适量的Al离子会使晶粒沿水平方向生长，减小薄膜表面的晶粒间隙，使薄膜表面光滑平整，改善薄膜的结晶和光学性能。电影。Ga掺杂量为3.0at%，Al掺杂量为2.0at%时，薄膜在可见光区的平均透射率最高（92%），禁带宽度最大（约3.95 ev）。此时，