Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy,Physica Status Solidi (B) - Basic Solid State Physics

当前位置： X-MOL 学术 › Phys. Status Solidi B › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Correlation of Defects and Lasing Threshold for AlGaN Deep Ultraviolet Lasers Grown by Molecular Beam Epitaxy
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2021-08-07 , DOI: 10.1002/pssb.202100201
Xue Yin ₁ , Songrui Zhao ₁

Affiliation

Herein, aluminum gallium nitride (AlGaN)/AlN double-heterostructure (DH) laser at 287 nm with a lasing threshold of 530 kW cm⁻² is shown. The laser structure is grown on the AlN-on-sapphire template by molecular beam epitaxy. This lasing threshold is drastically reduced compared with the previously reported AlGaN DH lasers at 297 nm with a threshold of around 1 MW cm⁻². The detailed studies indicate that this improvement is mainly attributed to the control of defect formation largely due to the increased growth temperature of the AlGaN active layer. This is consistent with the improved internal quantum efficiency at low excitations. Moreover, the control of Al vacancy related point defects is clearly demonstrated by the absence of defect emission in the visible band.

中文翻译：

分子束外延生长的AlGaN深紫外激光器的缺陷与激光阈值的相关性

在此，显示了具有 530 kW cm ^-2激光阈值的 287 nm 氮化铝镓 (AlGaN)/AlN 双异质结构 (DH) 激光器。激光结构通过分子束外延生长在蓝宝石上的 AlN 模板上。与之前报道的 297 nm 的 AlGaN DH 激光器相比，该激光阈值显着降低，阈值约为 1 MW cm ^-2。详细研究表明，这种改进主要归因于对缺陷形成的控制，这主要是由于 AlGaN 有源层的生长温度升高。这与在低激发下提高的内部量子效率是一致的。此外，在可见光波段没有缺陷发射清楚地证明了对 Al 空位相关点缺陷的控制。

更新日期：2021-08-07

点击分享查看原文

点击收藏

阅读更多本刊最新论文