Donor doping has always been the most simple, effective, and most common method to exploit outstanding performance of Bi₄Ti₃O₁₂ (BIT) high-temperature piezoceramics. Among various property parameters, the high-temperature electrical insulation characteristic is a particularly important nature, which is an important guarantee for the steady and reliable operation of BIT-based ceramics at high temperature. But, the electrical conduction mechanisms of donor-doped BIT ceramics at high temperature are still unclear. Herein, the high-temperature conduction mechanisms of Bi₄Ti_2.98(WNb)_0.01O₁₂ (BITWN) ceramics under different atmospheres are studied systematically and its high-temperature conduction mechanisms are revealed for the first time. It is found that the high-temperature conducting process of BITWN ceramics presents different conduction mechanisms under different atmospheres. BITWN exhibits n-type and ionic conduction in the Ar atmosphere, whereas it is p-type and ionic conduction in the O₂ atmosphere, which is closely related to oxygen vacancy defects. The work subverts the prior cognition that the conduction mechanism of BIT-based ceramics simply belongs to p-type, and more importantly, provides the theoretical foundation for how to control the working atmosphere of donor-doped BIT ceramics to obtain excellent electrical insulation in practical application.

中文翻译：

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供体掺杂 Bi4Ti3O12 Aurivillius 压电陶瓷中的高温导电机制：氧空位的作用

供体掺杂一直是发挥Bi ₄ Ti ₃ O ₁₂ (BIT) 高温压电陶瓷优异性能的最简单、有效和最常用的方法。在各种性能参数中，高温电绝缘特性尤为重要，是BIT基陶瓷在高温下稳定可靠运行的重要保证。但是，供体掺杂的 BIT 陶瓷在高温下的导电机制尚不清楚。在此，Bi ₄ Ti _2.98 (WNb) _0.01 O ₁₂的高温传导机制(BITWN) 陶瓷在不同气氛下的系统研究，并首次揭示其高温传导机制。研究发现，BITWN陶瓷的高温导电过程在不同气氛下呈现不同的导电机制。BITWN在Ar气氛中呈现n型和离子传导，而在O ₂气氛中呈现p型和离子传导，这与氧空位缺陷密切相关。该工作颠覆了先前认为BIT基陶瓷的导电机制仅属于p型的认知，更重要的是，为如何控制掺杂施主BIT陶瓷的工作气氛以在实践中获得优异的电绝缘性提供了理论基础。应用。