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Bandgap Tuning in BaZrS3 Perovskite Thin Films
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2021-08-06 , DOI: 10.1021/acsaelm.1c00575 Shyam Sharma 1 , Zachary Ward 2 , Kevin Bhimani 3 , Kang Li 4 , Aniruddha Lakhnot 3 , Rishabh Jain 3 , Su-Fei Shi 4 , Humberto Terrones 2 , Nikhil Koratkar 1, 3
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2021-08-06 , DOI: 10.1021/acsaelm.1c00575 Shyam Sharma 1 , Zachary Ward 2 , Kevin Bhimani 3 , Kang Li 4 , Aniruddha Lakhnot 3 , Rishabh Jain 3 , Su-Fei Shi 4 , Humberto Terrones 2 , Nikhil Koratkar 1, 3
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Chalcogenide perovskites (such as BaZrS3) are gaining increasing attention for solar cells due to their lead-free nature and superior environmental stability. However, a major limitation of BaZrS3 is that its bandgap (∼1.75 eV) is significantly larger than the ideal bandgap (∼1.34 eV) required to achieve the maximum theoretical efficiency for a single-junction photovoltaic cell. In this study, we demonstrate the reduction in bandgap from 1.75 to 1.4 eV through in situ alloying of titanium (Ti) during chemical vapor deposition growth, forming BaZr1–xTixS3 thin films. Theoretical study showed good agreement with experimental observations, demonstrating feasibility of bandgap tuning of BaZrS3 films.
中文翻译：
BaZrS3 钙钛矿薄膜的带隙调节
硫属化物钙钛矿（如 BaZrS 3）由于其无铅性质和优越的环境稳定性而越来越受到太阳能电池的关注。然而，BaZrS 3 的一个主要限制是其带隙（~1.75 eV）明显大于实现单结光伏电池的最大理论效率所需的理想带隙（~1.34 eV）。在这项研究中，我们证明了通过在化学气相沉积生长过程中钛 (Ti) 的原位合金化，形成 BaZr 1– x Ti x S 3薄膜，带隙从 1.75 eV 减少到 1.4 eV 。理论研究表明与实验观察结果非常吻合，证明了 BaZrS 带隙调谐的可行性3部电影。
更新日期：2021-08-24
中文翻译：
BaZrS3 钙钛矿薄膜的带隙调节
硫属化物钙钛矿（如 BaZrS 3）由于其无铅性质和优越的环境稳定性而越来越受到太阳能电池的关注。然而，BaZrS 3 的一个主要限制是其带隙（~1.75 eV）明显大于实现单结光伏电池的最大理论效率所需的理想带隙（~1.34 eV）。在这项研究中，我们证明了通过在化学气相沉积生长过程中钛 (Ti) 的原位合金化，形成 BaZr 1– x Ti x S 3薄膜，带隙从 1.75 eV 减少到 1.4 eV 。理论研究表明与实验观察结果非常吻合，证明了 BaZrS 带隙调谐的可行性3部电影。
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