Quadrupole Last-Passage Algorithm for Charge Density on an L-Shaped Conducting Surface,Advanced Theory and Simulations

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Quadrupole Last-Passage Algorithm for Charge Density on an L-Shaped Conducting Surface
Advanced Theory and Simulations ( IF 2.9 ) Pub Date : 2021-08-07 , DOI: 10.1002/adts.202100180
Hoseung Jang ₁ , Jongmin Park ₂ , Unjong Yu ₁ , Chi‐Ok Hwang ₃

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The last-passage (LP) Monte Carlo algorithms for the charge density on an L-shaped conducting surface are further developed by deriving a quadrupole LP Green's function on the L-shaped flat surface. To demonstrate the algorithm, charge densities on an L-shaped conductor are computed in 3D space and it is found that these results agree very well with the ones from the Given-Hwang's original last-passage algorithm on a flat surface. Compared with the Given-Hwang's LP algorithm, the quadrupole LP one is very suitable for charge density near the L-shaped edge boundary.

中文翻译：

L 形导电面上电荷密度的四极最后通过算法

通过推导 L 形平面上的四极 LP 格林函数，进一步发展了用于 L 形导电表面上电荷密度的最后通道 (LP) 蒙特卡罗算法。为了演示该算法，在 3D 空间中计算了 L 形导体上的电荷密度，发现这些结果与 Given-Hwang 的原始最后通道算法在平面上的结果非常吻合。与 Given-Hwang 的 LP 算法相比，四极 LP 一非常适合 L 形边缘边界附近的电荷密度。

更新日期：2021-08-07

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