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Study on Measurement Method of Microscopic 味 Potential
IEEE Transactions on Semiconductor Manufacturing ( IF 2.3 ) Pub Date : 2021-07-13 , DOI: 10.1109/tsm.2021.3095965
Yuichi Watanabe , Hirofumi Ikawa , Shota Suzuki , Takeshi Isobe , Tatsuhiko Hirano , Kazumi Sugai

We developed a method of measuring microscopic ζ potential (ZP) from force vs distance (FD) curves observed by atomic force microscope (AFM). ZP in microscopic regions on wafer surfaces may be one of the most important design guides of chemical mechanical polishing slurries applicable to ultrafine patterned wafers, while ZP is generally observed as an average information for a wide area. Our method is based on the linear correlation between jump-in loads in FD curves observed by the AFM for the blanket wafers (SiO 2 , SiN and poly-Si) in water systems and ZP of each wafer surface measured by the flow potential method. In the applications of our AFM-based measurement method, material-dependency of ZP on the SiO 2 /SiN patterned wafer surface and an additive material in a slurry (anionic polymer) adsorbing selectively on the SiN surface of the SiO 2 /SiN patterned wafer were observed.

中文翻译:


微观味势测量方法的研究



我们开发了一种根据原子力显微镜 (AFM) 观察到的力与距离 (FD) 曲线来测量微观 z 电势 (ZP) 的方法。晶圆表面微观区域的ZP可能是适用于超精细图案晶圆的化学机械抛光浆料最重要的设计指南之一,而ZP通常被观察为大面积的平均信息。我们的方法基于 AFM 观察到的水系统中的毯式晶圆(SiO 2 、 SiN 和多晶硅)的 FD 曲线中的跳跃负载与通过流势法测量的每个晶圆表面的 ZP 之间的线性相关性。在我们基于 AFM 的测量方法的应用中,ZP 对 SiO 2 /SiN 图案化晶圆表面的材料依赖性以及浆料中的添加剂材料(阴离子聚合物)选择性地吸附在 SiO 2 /SiN 图案化晶圆的 SiN 表面上被观察到。
更新日期:2021-07-13
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