We investigated the reduction of equivalent oxide thickness (EOT) of the in-situ formed Hf-based metal/oxide/nitride/oxide/silicon (MONOS) structure nonvolatile memory (NVM) device utilizing the HfON tunneling layer (TL). In case of the HfO2 TL, the SiO2 interfacial layer (IL) was formed which incrased EOT. The HfON device shows on/off current of 3.2 ×106 at drain voltage ( V D) of 0.05 V, subthreshold swing (SS) of 113 mV/dec., and memory window (MW) of 3.9 V at the program voltage/time ( V PGM/t PGM) and erase voltage/time ( V ERS/t ERS) of ±8 V/100 ms. Although, it shows low retention characteristics with 50% after 10 years, low-voltage and short-pulse operation were achieved, such as MW of 1 V at V PGM/t PGM and V ERS/t ERS of ±8 V/ 1 μs. Furthermore, it showed larger drain source voltage ( VDS) dependence than HfO2 TL by utilizing charge injection from electrode side, which would reduce the operation voltage and increase the operation speed.

中文翻译：

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用于低压高速操作非易失性存储器应用的 MONOS 器件 HfON 隧道层研究


我们研究了利用 HfON 隧道层 (TL) 减少原位形成的铪基金属/氧化物/氮化物/氧化物/硅 (MONOS) 结构非易失性存储 (NVM) 器件的等效氧化物厚度 (EOT)。在 HfO2 TL 的情况下，形成了 SiO2 界面层 (IL)，这增加了 EOT。 HfON 器件在漏极电压 (VD) 为 0.05 V 时显示开/关电流为 3.2 ×106，亚阈值摆幅 (SS) 为 113 mV/dec.，在编程电压/时间 ( V PGM/t PGM）和擦除电压/时间（ V ERS/t ERS）为 ±8 V/100 ms。虽然10年后显示出50%的低保持特性，但实现了低电压和短脉冲操作，例如在V PGM/t PGM时MW为1V，VERS/t ERS为±8V/1μs 。此外，通过利用电极侧的电荷注入，它比HfO2 TL表现出更大的漏源电压（VDS）依赖性，这将降低工作电压并提高工作速度。