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Flow Analysis and Relative Humidity (RH) Measurement in the Horizontal Plane of a Front Opening Unified Pod (FOUP)
IEEE Transactions on Semiconductor Manufacturing ( IF 2.3 ) Pub Date : 2021-07-09 , DOI: 10.1109/tsm.2021.3096147
Tee Lin , Omid Ali Zargar , Hen-Lin Chen , Yu-Nung Huang , Shih-Cheng Hu , Graham Leggett

Moisture removal techniques such as purge have been developed for the front opening unified pod (FOUP) in the semiconductor industry. The FOUP purge can significantly increase the quality of integrated circuit (IC) products. An experimental model of a simulated clean room, was designed at Taipei Tech. A mini environment (ME) and a FOUP were installed inside the model. Smoke flow visualization technique was performed with the assistance of an innovative laser light sheet generation system. A homemade smoke generator simulates the moist air flow pattern into the FOUP. The FOUP top view flow pattern was recorded by a Hamamatsu digital camera. The particle image velocimetry (PIV) in the FOUP horizontal plane was analyzed. Moreover, the relative humidity (RH) was monitored inside the FOUP. The results show that a purge flow rate of 200 LPM is the optimum purge flow rate for moisture removal performance inside the FOUP. The findings of the present study could significantly increase the quality of chip products in semiconductor manufacturing, decreasing product defect rates and significantly reducing energy consumption.

中文翻译:


前开口统一传送盒 (FOUP) 水平面内的流动分析和相对湿度 (RH) 测​​量



半导体行业的前开式统一晶圆盒 (FOUP) 已开发出吹扫等除湿技术。 FOUP 净化可以显着提高集成电路 (IC) 产品的质量。台北科技大学设计了一个模拟洁净室的实验模型。模型内部安装了迷你环境(ME)和 FOUP。烟流可视化技术是在创新的激光光片生成系统的帮助下进行的。自制烟雾发生器模拟进入 FOUP 的潮湿空气流动模式。 FOUP 顶视图流动模式由滨松数码相机记录。分析了 FOUP 水平面上的粒子图像测速 (PIV)。此外,还对 FOUP 内部的相对湿度 (RH) 进行监测。结果表明,200 LPM 的吹扫流速是 FOUP 内部除湿性能的最佳吹扫流速。本研究的结果可以显着提高半导体制造中芯片产品的质量,降低产品缺陷率并显着降低能耗。
更新日期:2021-07-09
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