The 3 MeV proton irradiation effects on SiGe low noise amplifier (LNA) (NXP BGU7005) performance under different voltage supply VCC (0 V, 2.5 V) conditions were firstly experimental studied in this present work. The S parameters including S₁₁, S_22, S₂₁, 1 dB compression point and noise figure (NF) of the test samples under different bias voltage supply were measured and compared before and after 3 MeV proton irradiation. The total proton irradiation fluence was 1 × 10¹⁵ protons/cm². The maximum degradation quantities of the gain S₂₁ and NF of the test samples under zero bias are measured respectively 1.6 dB and 1.2 dB. Compared with the samples under 2.5 V bias supply, the maximum degradation of S₂₁ and NF are respectively 1.1 dB and 0.8 dB in the whole frequency band. It is noteworthy that the gain and NF of SiGe LNAs under zero-bias mode suffer enhanced degradation compared with those under normal bias supply. The key influence factors are discussed based on the correlation of the SiGe device and the LNA circuit. Different process of the ionization damage and displacement damage under zero-bias and 2.5 V bias voltage supply contributed to the degradation difference. The underlying physical mechanisms are analyzed and investigated.

本文首先通过实验研究了在不同电压电源 VCC（0 V、2.5 V）条件下 3 MeV 质子辐照对 SiGe 低噪声放大器 (LNA) (NXP BGU7005) 性能的影响。在3 MeV质子辐照前后，测量并比较了不同偏压供电下测试样品的S ₁₁、S _{22 、} S ₂₁ 、1 dB压缩点和噪声系数(NF)等S参数。总质子辐照能量密度为1×10 ¹⁵质子/cm ²。_{增益 S 21}的最大退化量零偏压下测试样品的NF和NF分别测得1.6 dB和1.2 dB。与 2.5 V 偏置电源下的样品相比，S ₂₁和 NF 在整个频带内的最大衰减分别为 1.1 dB 和 0.8 dB。值得注意的是，SiGe LNA 在零偏置模式下的增益和 NF 与正常偏置电源下的增益和 NF 相比，下降幅度更大。基于SiGe器件和LNA电路的相关性讨论了关键影响因素。零偏压和2.5 V偏压供电下电离损伤和位移损伤的不同过程导致了退化差异。分析和研究了潜在的物理机制。