Superior thermal performance of GaN/graphite composite (GC) bonded substrates having an ultralow thermal resistance (R _th) has been demonstrated. Thermal transition in GaN-on-GC features fast relaxation process in GaN and slow case in GC, respectively. The temperature plateau at the GaN/GC interface indicates the R _th across this interface is quite small and hence can be ignored. High-quality bonding interface and homogenous layer properties were obtained for the GaN-on-GC system. This favors the acoustic phonon transport and is bound to contribute to the outstanding thermal performance. The GaN/GC bonded substrate provides a promising candidate for thermal management applications in GaN-based electronics.

具有超低热阻 ( R _th )的 GaN/石墨复合材料 (GC) 键合衬底的优异热性能已被证明。GaN-on-GC 中的热转变分别具有 GaN 中的快速弛豫过程和 GC 中的缓慢情况。GaN/GC 界面处的温度平台表明该界面上的R _th非常小，因此可以忽略不计。GaN-on-GC 系统获得了高质量的键合界面和均匀的层特性。这有利于声学声子传输，并必然有助于出色的热性能。GaN/GC 键合衬底为基于 GaN 的电子产品中的热管理应用提供了一个有希望的候选者。