GaInNAs junctions can be applied to the lattice-matched five-junction (5J) or six-junction (6J) solar cells to achieve ultra-high efficiency. In this work, a GaInNAs solar cell integrating distributed Bragg reflectors (DBR) is grown by metalorganic vapor phase epitaxy. According to external quantum efficiency measurements, the photocurrent can be improved by ∼20% due to DBR. Meanwhile, a short-circuit current (J _sc ) of GaInNAs DBR-cell is obtained high as 13.78mAcm⁻² under the air mass (AM0) spectrum, which is completely satisfied the demand of 36%-efficiency 5J solar cell (∼ 12mAcm⁻²). Finally, Dark-IV characteristics reveal that the introduction of DBR does not deteriorate GaInNAs quality.

GaInNAs 结可应用于晶格匹配的五结 (5J) 或六结 (6J) 太阳能电池，以实现超高效率。在这项工作中，集成分布式布拉格反射器 (DBR) 的 GaInNAs 太阳能电池是通过金属有机气相外延生长的。根据外部量子效率测量，由于 DBR，光电流可以提高约 20%。同时，GaInNAs DBR电池的短路电流（J _sc）在空气质量（AM0）光谱下高达13.78mAcm ^-2，完全满足36％效率5J太阳能电池（∼12mAcm ^-2 )。最后，Dark-IV 特性表明 DBR 的引入不会降低 GaInNAs 的质量。