A general layered 2D materials-derived atomic substitution conversion strategy is proposed to achieve the synthesis of large-size ultrathin nonlayered 2D materials.

Using low-melting-point CdI₂ flakes via a simple hot plate assisted vertical vapor deposition method as precursor, large-size ultrathin CdS flakes were successfully converted from layered to nonlayered nanostructures through a facile low-temperature chemical sulfurization process.

The size and thickness of CdS flakes can be controlled by the CdI₂ precursor. The growth mechanism is ascribed to the chemical substitution reaction from I to S atoms between CdI₂ and CdS, which has been evidenced by experiments and theoretical calculations.

提出了一种通用的层状二维材料衍生的原子取代转换策略，以实现大尺寸超薄非层状二维材料的合成。

以低熔点CdI ₂薄片通过简单的热板辅助垂直气相沉积法作为前驱体，通过简便的低温化学硫化工艺成功地将大尺寸超薄CdS薄片从层状纳米结构转变为非层状纳米结构。

CdS薄片的尺寸和厚度可以通过CdI ₂前体来控制。_{生长机制归因于CdI 2}和CdS之间从I到S原子的化学取代反应，这已通过实验和理论计算得到证实。