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Photostimulated Defect Creation Processes in the Undoped and Bi3+-Doped Ca3Ga2Ge3O12 Garnets
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2021-08-05 , DOI: 10.1002/pssb.202100080 Aleksei Krasnikov 1 , Volodymyr Tsiumra 2, 3 , Leonid Vasylechko 4 , Svetlana Zazubovich 1 , Yaroslav Zhydachevskyy 2, 4
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2021-08-05 , DOI: 10.1002/pssb.202100080 Aleksei Krasnikov 1 , Volodymyr Tsiumra 2, 3 , Leonid Vasylechko 4 , Svetlana Zazubovich 1 , Yaroslav Zhydachevskyy 2, 4
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The thermally stimulated luminescence characteristics of UV-irradiated microcrystalline powders of the undoped and Bi3+-doped Ca3Ga2Ge3O12 garnets are investigated in the 80–510 K temperature range after selective irradiation in the 4.1–5.7 eV energy range. The dependences of these characteristics on the irradiation energy, temperature, and duration, as well as on the emission energy, are obtained. The origin of the electron and hole centers of different types responsible for the observed thermally stimulated luminescence glow curve peaks is clarified, and the depths of the corresponding electron traps are determined. The electron–hole recombination processes, resulting in the appearance of the intrinsic and Bi3+-related luminescence, are investigated. The mechanisms of the processes responsible for the photostimulated creation of various electron and hole centers under irradiation of the undoped and Bi3+-doped Ca3Ga2Ge3O12 garnets in the band-to-band transition region and in the energy ranges of the intrinsic and Bi-related absorption bands are proposed.
中文翻译：
未掺杂和掺杂 Bi3+ 的 Ca3Ga2Ge3O12 石榴石中的光致缺陷产生过程
未掺杂和掺杂 Bi 3+ 的Ca 3 Ga 2 Ge 3 O 12的紫外光照射微晶粉末的热激发发光特性在 4.1-5.7 eV 能量范围内进行选择性辐照后，在 80-510 K 温度范围内对石榴石进行了研究。获得了这些特性对辐照能量、温度和持续时间以及发射能量的依赖性。阐明了负责观察到的热激发发光辉光曲线峰的不同类型电子和空穴中心的起源，并确定了相应电子陷阱的深度。研究了导致本征发光和 Bi 3+相关发光出现的电子-空穴复合过程。在未掺杂和 Bi 3+掺杂的 Ca 的照射下，负责光刺激产生各种电子和空穴中心的过程的机制3 Ga 2 Ge 3 O 12石榴石在带间过渡区以及本征吸收带和Bi相关吸收带的能量范围内被提出。
更新日期：2021-10-09
中文翻译：
未掺杂和掺杂 Bi3+ 的 Ca3Ga2Ge3O12 石榴石中的光致缺陷产生过程
未掺杂和掺杂 Bi 3+ 的Ca 3 Ga 2 Ge 3 O 12的紫外光照射微晶粉末的热激发发光特性在 4.1-5.7 eV 能量范围内进行选择性辐照后，在 80-510 K 温度范围内对石榴石进行了研究。获得了这些特性对辐照能量、温度和持续时间以及发射能量的依赖性。阐明了负责观察到的热激发发光辉光曲线峰的不同类型电子和空穴中心的起源，并确定了相应电子陷阱的深度。研究了导致本征发光和 Bi 3+相关发光出现的电子-空穴复合过程。在未掺杂和 Bi 3+掺杂的 Ca 的照射下，负责光刺激产生各种电子和空穴中心的过程的机制3 Ga 2 Ge 3 O 12石榴石在带间过渡区以及本征吸收带和Bi相关吸收带的能量范围内被提出。
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