The effect of strain through mechanical processing on the formation of silicon dioxide, one of the most important chemical reactions for the fabrication of semiconductors, biosensors or photovoltaics, has not yet been studied in detail. In this study, we use the surface modification of silicon by alkylsilanes and Raman microscopy techniques to visualise where different oxidants react preferentially on mechanically processed surfaces. We found that HNO₃, H₂O₂ as well as H₂SiF₆ only oxidise tensile strained silicon areas and do not oxidise unstrained silicon even after long reaction times. Furthermore, a comparison between H₂O₂ and HNO₃ in the presence of HF was also carried out and it was shown that H₂O₂/HF only etches away tensile strained areas, whereas HNO₃/HF initially attacks the tensile strained areas but also forms NOx species. These NOx species then lead to a strain unselective, geometry-based etching mechanism. These results lead to new possibilities in strain lithography, high-precision etching, as well as in the structuring of biosensors and localisation of surface modifications.

尚未详细研究通过机械加工产生的应变对二氧化硅形成的影响，二氧化硅是制造半导体、生物传感器或光伏器件的最重要化学反应之一。在这项研究中，我们使用烷基硅烷和拉曼显微镜技术对硅进行表面改性，以可视化不同氧化剂在机械加工表面上优先反应的位置。我们发现HNO ₃、H ₂ O ₂以及H ₂ SiF ₆仅氧化拉伸应变的硅区域并且即使在长时间反应之后也不会氧化未应变的硅。此外，H ₂ O ₂和 HNO ₃之间的比较还进行了在 HF 存在的情况下，结果表明 H ₂ O ₂ /HF 仅蚀刻掉拉伸应变区域，而 HNO ₃ /HF 最初会侵蚀拉伸应变区域，但也会形成 NOx 物质。然后，这些 NOx 物质会导致应变非选择性的、基于几何形状的蚀刻机制。这些结果为应变光刻、高精度蚀刻以及生物传感器的结构化和表面修饰的定位带来了新的可能性。