Metal oxide semiconductor (MOS) thin films are promising sensing layer for integration in gas sensor devices for detecting toxic and harmful molecules. Herein, tungsten oxide (WO₃) thin films are deposited on interdigital electrodes by vacuum thermal evaporation to realize batch fabrication of high-performance gas sensors. Subsequent annealing at different temperatures allows for regulation of the concentration of oxygen vacancies in the WO₃ films, which has been found to exert a great influence on the sensor properties. In addition, the surface structure of WO₃ films is also highly dependent on the annealing temperature. Gas sensing investigations show that the WO₃ sensor annealed at 500 °C possesses the best sensing properties for detecting triethylamine (TEA) including very high response, good selectivity, fast response, and low limit of detection (63 ppb). The excellent sensor performances are attributed to the enhanced adsorption of oxidative oxygen species due to the presence of abundant oxygen vacancies. The scalable fabrication of WO₃ thin film gas sensors and the oxygen vacancy engineering strategy proposed herein may shed some light to developing high performance environmental sensors.

金属氧化物半导体 (MOS) 薄膜是一种很有前途的传感层，可用于集成到气体传感器设备中，以检测有毒和有害分子。在此，通过真空热蒸发将氧化钨（WO ₃）薄膜沉积在叉指电极上，实现了高性能气体传感器的批量制造。随后在不同温度下的退火允许调节WO ₃薄膜中氧空位的浓度，已发现这对传感器性能产生很大影响。此外，WO ₃薄膜的表面结构也高度依赖于退火温度。气体传感研究表明，WO ₃在 500 °C 退火的传感器具有检测三乙胺 (TEA) 的最佳传感特性，包括非常高的响应、良好的选择性、快速响应和低检测限 (63 ppb)。优异的传感器性能归因于由于存在丰富的氧空位而增强了氧化氧物质的吸附。WO ₃薄膜气体传感器的可扩展制造和本文提出的氧空位工程策略可能为开发高性能环境传感器提供一些启示。