Cyclic etching of silicon oxide using NF3/H2 remote plasma and NH3 gas flow,Plasma Processes and Polymers

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Cyclic etching of silicon oxide using NF3/H2 remote plasma and NH3 gas flow
Plasma Processes and Polymers ( IF 2.9 ) Pub Date : 2021-08-03 , DOI: 10.1002/ppap.202100063
You Jung Gill ₁ , Doo San Kim ₁ , Hong Seong Gil ₁ , Ki Hyun Kim ₁ , Yun Jong Jang ₁ , Ye Eun Kim ₁ , Geun Young Yeom _{1,

2}

Affiliation

Selective isotropic cyclic dry etching of silicon oxide (SiO₂) was investigated using a three-step cyclic process composed of hydrogen fluoride (HF) adsorption by NF₃/H₂ remote plasma and reaction with NH₃ gas flow to form ammonium fluorosilicate ((NH₄)₂SiF₆), and desorption by heating. The variation of the ratio of NF₃:H₂ (2:1 to 1:3) and adsorption time (10–180 s) showed the highest etch selectivity of SiO₂ over Si₃N₄ at 1:2 ratio of NF₃:H₂ and with the adsorption time of 20 s. The etch selectivity higher than 40 was observed with 20 s of adsorption time with a 1:2 ratio of NF₃:H₂ remote plasma and the total etch depth was linearly increased with the increase of cycles with the SiO₂ EPC of ~7.5 nm/cycle.

中文翻译：

使用 NF3/H2 远程等离子体和 NH3 气流循环蚀刻氧化硅

选择性各向同性环状干蚀刻氧化硅（SiO ₂使用由NF氟化氢（HF）的吸附组成的三步循环过程）进行了研究₃ / H ₂远程等离子体和反应用NH _3个气流氟形式铵（（ NH ₄ ) ₂ SiF ₆ )，加热解吸。NF ₃ :H ₂的比率（2:1 到 1:3）和吸附时间（10-180 秒）的变化表明，在 1:2 的 NF ₃比率下，SiO _{2 的}蚀刻选择性高于 Si ₃ N ₄ :H ₂吸附时间为 20 s。在 NF ₃ :H ₂远程等离子体的比例为 1:2 的情况下，在 20 秒的吸附时间下观察到蚀刻选择性高于 40，并且总蚀刻深度随着循环次数的增加而线性增加，SiO ₂ EPC 约为 7.5 nm /循环。

更新日期：2021-08-03

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