Noncollinear antiferromagnets have promising potential for replacing ferromagnets in the field of spintronics as high-density devices with ultrafast operation. To take full advantage of noncollinear antiferromagnets in spintronics applications, it is important to achieve efficient manipulation of noncollinear antiferromagnetic spin. Here, using the anomalous Hall effect as an electrical signal of the triangular magnetic configuration, spin-orbit-torque switching with no external magnetic field is demonstrated in noncollinear antiferromagnetic antiperovskite manganese nitride ${\mathrm{Mn}}_3\mathrm{Ga}\mathrm{N}$ at room temperature. The pulse-width dependence and subsequent relaxation of Hall signal behavior indicate that the spin-orbit torque plays a more important role than the thermal contribution due to pulse injection. In addition, multistate memristive switching with respect to pulse current density is observed. The findings advance the effective control of noncollinear antiferromagnetic spin, facilitating the use of such materials in antiferromagnetic spintronics and neuromorphic computing applications.

中文翻译：

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非共线反铁磁反钙钛矿氮化锰Mn3GaN的自旋轨道扭矩切换

非共线反铁磁体在自旋电子学领域具有替代铁磁体作为具有超快操作的高密度器件的潜力。为了在自旋电子学应用中充分利用非共线反铁磁体，实现非共线反铁磁自旋的有效操纵非常重要。在这里，使用反常霍尔效应作为三角形磁性配置的电信号，在非共线反铁磁反钙钛矿氮化锰中证明了没有外部磁场的自旋轨道扭矩切换${锰}_3嘎\mathrm{N}$在室温下。霍尔信号行为的脉冲宽度依赖性和随后的弛豫表明自旋轨道扭矩比脉冲注入引起的热贡献起着更重要的作用。此外，观察到关于脉冲电流密度的多态忆阻开关。这些发现推进了对非共线反铁磁自旋的有效控制，促进了此类材料在反铁磁自旋电子学和神经形态计算应用中的使用。