Synthesis of Wet-Chemically Prepared Porous-Graphene Single Layers on Si/SiO2 Substrate Increasing the Photoluminescence of MoS2 in Heterostructures,Advanced Materials Interfaces

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Synthesis of Wet-Chemically Prepared Porous-Graphene Single Layers on Si/SiO2 Substrate Increasing the Photoluminescence of MoS2 in Heterostructures
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2021-08-03 , DOI: 10.1002/admi.202100783
Yiqing Wang ₁ , Christof Neumann ₂ , Marleen Hußmann ₁ , Qing Cao ₁ , Yalei Hu ₁ , Oisín Garrity ₃ , Patryk Kusch ₃ , Andrey Turchanin ₂ , Siegfried Eigler ₁

Affiliation

Wet-chemical generation of pores in graphene is a challenging synthetic task. Although graphene oxide is available in large quantities and chemically diverse, extended lattice defects already present from synthesis hamper the controlled growth of pores. However, membrane, energy, or nanoelectronic applications essentially require uniform pores in applications. Here, oxo-functionalized graphene (oxoG), a type of graphene oxide with a controlled density of vacancy defects, is used as starting material. Pores in graphene are generated from potassium permanganate treated oxoG and heating from room temperature to 400 °C. With etching time, the size of pores increases and pore-diameters of, for example, 100–200 nm in majority become accessible. The experiments are conducted on the single-layer level on Si/SiO₂ wafers. Flakes remain stable on the µm scale and do not fold. The process leads to rims of pores, which are functionalized by carbonyl groups in addition to hydroxyl and carboxyl groups. In addition, it is found that heterostructures with intrinsically n-doped MoS₂ can be fabricated and photoluminescence (PL) measurements reveal a 10-fold increased PL. Thus, graphene with pores is a novel highly temperature-stable electron-accepting 2D material to be integrated into van der Waals heterostructures.

中文翻译：

Si/SiO2 衬底上湿法化学制备多孔石墨烯单层的合成增加异质结构中 MoS2 的光致发光

石墨烯中孔隙的湿化学生成是一项具有挑战性的合成任务。尽管氧化石墨烯可大量使用且化学性质多样，但合成中已经存在的扩展晶格缺陷阻碍了孔的受控生长。然而，膜、能量或纳米电子应用在应用中基本上需要均匀的孔。在这里，氧官能化石墨烯 (oxoG) 是一种具有可控空位缺陷密度的氧化石墨烯，用作起始材料。石墨烯中的孔是由高锰酸钾处理的 oxoG 和从室温加热到 400 °C 产生的。随着蚀刻时间的延长，孔的尺寸会增加，并且大多数孔直径为 100-200 nm。实验是在 Si/SiO ₂上的单层水平上进行的晶圆。薄片在微米尺度上保持稳定，不会折叠。该过程导致孔的边缘，除了羟基和羧基之外，其还被羰基官能化。此外，发现可以制造具有本征 n 掺杂的 MoS _{2 的}异质结构，并且光致发光 (PL) 测量显示 PL 增加了 10 倍。因此，具有孔隙的石墨烯是一种新型的高温稳定电子接受二维材料，可集成到范德华异质结构中。

更新日期：2021-09-12

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