A method based on infrared reflectance spectroscopy is presented by which the Mg content in ZnO/(Zn,Mg)O multiple quantum wells with very thin barriers can be determined. The method relies on the observation of interface phonon-polaritons which appear as sharp dips in the p-polarized reflectance spectra at oblique incidence near the longitudinal optical (LO)-phonon frequencies of both QW and barrier materials. By fitting the reflectance spectra to a dielectric function model, the LO phonon frequency of the (Zn,Mg)O barrier layers can be determined. The LO phonon frequency depends on the Mg content. Comparing to Mg content calibration via cathodoluminescence, a linear relationship between the reflectance dip frequency and the Mg content is obtained. The presented method serves as a rapid mean to determine the Mg content on final structures with very thin (Zn,Mg)O layers -such as device structures- where alternative, destructive methods cannot be used.

提出了一种基于红外反射光谱的方法，通过该方法可以确定具有非常薄势垒的 ZnO/(Zn,Mg)O 多量子阱中的 Mg 含量。该方法依赖于对界面声子极化子的观察，这些声子极化子在p- 在 QW 和势垒材料的纵向光学 (LO) 声子频率附近斜入射的偏振反射光谱。通过将反射光谱拟合到介电函数模型，可以确定 (Zn,Mg)O 阻挡层的 LO 声子频率。LO 声子频率取决于镁含量。与通过阴极发光校准 Mg 含量相比，获得了反射率倾角频率和 Mg 含量之间的线性关系。所提出的方法可作为一种快速手段来确定具有非常薄的 (Zn, Mg) O 层的最终结构上的 Mg 含量 - 例如器件结构 - 在那里无法使用替代的破坏性方法。