Silicon nanocrystals doped with silicon dioxide (Si-NCs:SiO₂) are a promising silicon (Si)-based light-emitting material. However, their low efficiency and difficulty tuning their light emission have hindered the practical use of Si-NCs:SiO₂. We used facile approaches to prepare highly luminescent Si-NCs:SiO₂ from hydrogen silsesquioxane (HSQ), and to tune the light emission by chemical etching. Characterizations were conducted using transmission electron microscopy, photoluminescence (PL) and Raman spectroscopy to acquire information on their structure, nanocrystal size, light emission properties, and other characteristics. As compared to Si-NCs:SiO₂ prepared by the regular method of phase separation of silicon oxide (SiOx) (1 < x < 2), the Si-NCs:SiO₂ prepared from HSQ is more luminescent and the PL peak position is readily tunable by chemical etching. PL peak positions of 570 nm, 610 nm and 730 nm of Si-NCs:SiO₂ have been obtained.

掺杂有二氧化硅的硅纳米晶体 (Si-NCs:SiO ₂ ) 是一种很有前途的硅 (Si) 基发光材料。然而，它们的低效率和难以调节其光发射阻碍了 Si-NCs:SiO ₂的实际应用。我们使用简便的方法从氢倍半硅氧烷 (HSQ)制备高度发光的 Si-NCs:SiO ₂，并通过化学蚀刻调整发光。使用透射电子显微镜、光致发光 (PL) 和拉曼光谱进行表征，以获取有关其结构、纳米晶体尺寸、发光特性和其他特性的信息。与 Si-NCs 相比：SiO ₂通过氧化硅 (SiOx) (1 < x < 2) 的常规相分离方法制备，由 HSQ 制备的 Si-NCs:SiO ₂更发光，并且 PL 峰位置易于通过化学蚀刻进行调节。已获得Si-NCs:SiO ₂的570 nm、610 nm和730 nm的PL峰位置。