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Preparation of Cu2ZnSnS4 Solar Cells by Sputtering Three Sulfide Targets at Different Sulfurization Annealing Temperatures
Journal of Electronic Materials ( IF 2.2 ) Pub Date : 2021-06-11 , DOI: 10.1007/s11664-021-09027-y
Jie Guo , Shuaihui Sun , Ruiting Hao , Licun Sun , Lu Wang , Bin Liu

Cu2ZnSnS4 (CZTS) thin films were prepared by sputtering three sulfide targets at different sulfurization annealing temperatures from 550 to 600 ℃. The morphology, microstructure and optical-electrical properties of CZTS thin films were investigated. It was found that the crystal quality at the CZTS/Mo interface without intermediate layers was promising and the thickness of MoS2 was limited to within 90 nm. The expected results were achieved after 575 ℃ sulfurization annealing, indicating that sputtering three sulfide targets can compensate for part of the sulfur partial pressure in the sulfurization process. The measurements showed that CZTS thin film (called S2) sulfurized at 575 ℃ with a mobility of 282.7 cm2/V·s and a band gap of 1.49 eV had the best electrical and optical properties. The elemental depth profile showed that the composition in S2 was homogeneously distributed. Finally, the CZTS solar cell with an active area 0.8 cm2 was successfully fabricated and the conversion efficiency was 2.7%. The max external quantum efficiency exhibited a value of 79.7%. The short-circuit current density and open-circuit voltage of the device were 20.12 mA/cm2 and 381 mV, respectively. The relationship between the composition and the voltage deficit was also discussed.



中文翻译:

不同硫化退火温度下溅射三种硫化物靶材制备Cu2ZnSnS4太阳能电池

通过在550~600 ℃的不同硫化退火温度下溅射三种硫化物靶材,制备了Cu 2 ZnSnS 4 (CZTS)薄膜。研究了CZTS薄膜的形貌、微观结构和光电性能。发现没有中间层的CZTS/Mo界面处的晶体质量是有希望的,并且MoS 2的厚度被限制在90nm以内。575℃硫化退火后达到了预期的效果,说明溅射三硫化物靶材可以补偿硫化过程中的部分硫分压。测量表明,CZTS薄膜(称为S 2)在575 ℃硫化,迁移率为282.7 cm 2/V·s 和 1.49 eV 的带隙具有最好的电学和光学特性。元素深度剖面表明S 2中的成分分布均匀。最后,成功制作了活性面积为0.8 cm 2的CZTS太阳能电池,转换效率为2.7%。最大外量子效率显示值为 79.7%。该器件的短路电流密度和开路电压分别为20.12 mA/cm 2和381 mV。还讨论了组成与电压不足之间的关系。

更新日期:2021-08-02
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