Cu₂ZnSnS₄ (CZTS) thin films were prepared by sputtering three sulfide targets at different sulfurization annealing temperatures from 550 to 600 ℃. The morphology, microstructure and optical-electrical properties of CZTS thin films were investigated. It was found that the crystal quality at the CZTS/Mo interface without intermediate layers was promising and the thickness of MoS₂ was limited to within 90 nm. The expected results were achieved after 575 ℃ sulfurization annealing, indicating that sputtering three sulfide targets can compensate for part of the sulfur partial pressure in the sulfurization process. The measurements showed that CZTS thin film (called S₂) sulfurized at 575 ℃ with a mobility of 282.7 cm²/V·s and a band gap of 1.49 eV had the best electrical and optical properties. The elemental depth profile showed that the composition in S₂ was homogeneously distributed. Finally, the CZTS solar cell with an active area 0.8 cm² was successfully fabricated and the conversion efficiency was 2.7%. The max external quantum efficiency exhibited a value of 79.7%. The short-circuit current density and open-circuit voltage of the device were 20.12 mA/cm² and 381 mV, respectively. The relationship between the composition and the voltage deficit was also discussed.

通过在550~600 ℃的不同硫化退火温度下溅射三种硫化物靶材，制备了Cu ₂ ZnSnS ₄ (CZTS)薄膜。研究了CZTS薄膜的形貌、微观结构和光电性能。发现没有中间层的CZTS/Mo界面处的晶体质量是有希望的，并且MoS ₂的厚度被限制在90nm以内。575℃硫化退火后达到了预期的效果，说明溅射三硫化物靶材可以补偿硫化过程中的部分硫分压。测量表明，CZTS薄膜（称为S ₂）在575 ℃硫化，迁移率为282.7 cm ²/V·s 和 1.49 eV 的带隙具有最好的电学和光学特性。元素深度剖面表明S ₂中的成分分布均匀。最后，成功制作了活性面积为0.8 cm ²的CZTS太阳能电池，转换效率为2.7%。最大外量子效率显示值为 79.7%。该器件的短路电流密度和开路电压分别为20.12 mA/cm ²和381 mV。还讨论了组成与电压不足之间的关系。