The bandgap tuning of two-dimensional (2D) materials is a vital step for their potential applications in the realm of nanoelectronics, optoelectronics, and spintronics. In this context, the bandgap of cobalt (Co)-adsorbed nanoribbons of novel 2D materials (for instance, graphene (GNR), h-BN (BNNR), silicene (SiNR), germanene (GeNR), stanene (SnNR), and phosphorene (PNR)) is investigated under the effect of a transverse magnetic field via an acoustical deformation potential (ADP) scattering mechanism. Bandgaps ranging from 1.10 eV to 1.42 eV were obtained for Co-adsorbed 2D nanoribbons, which display semiconducting behaviour. In addition to that, investigating the impact of temperature on the bandgap revealed an anomalous temperature dependence of the bandgap. The outcomes of the present work would be advantageous for developing transition metal (TM)-adsorbed-nanoribbon-based nanoelectronic and spintronic devices, wherein controlling their bandgap by employing a magnetic field is a useful tool for advancing nanoribbon-based technology.

二维 (2D) 材料的带隙调谐是其在纳米电子学、光电子学和自旋电子学领域的潜在应用的重要一步。在这种情况下，新型 2D 材料（例如石墨烯 (GNR)、h-BN (BNNR)、硅烯 (SiNR)、锗烯 (GeNR)、锡烯 (SnNR) 和磷烯 (PNR)) 在横向磁场的影响下通过声变形势 (ADP) 散射机制进行研究。共吸附二维纳米带的带隙范围为 1.10 eV 至 1.42 eV，显示出半导体行为。除此之外，研究温度对带隙的影响揭示了带隙的异常温度依赖性。