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Ultrathin Multibridge Channel Transistor Enabled by van der Waals Assembly
Advanced Materials ( IF 27.4 ) Pub Date : 2021-08-01 , DOI: 10.1002/adma.202102201 Xiaohe Huang 1 , Chunsen Liu 2 , Senfeng Zeng 1 , Zhaowu Tang 1 , Shuiyuan Wang 1 , Xiaozhang Chen 1 , David Wei Zhang 3 , Peng Zhou 1
Advanced Materials ( IF 27.4 ) Pub Date : 2021-08-01 , DOI: 10.1002/adma.202102201 Xiaohe Huang 1 , Chunsen Liu 2 , Senfeng Zeng 1 , Zhaowu Tang 1 , Shuiyuan Wang 1 , Xiaozhang Chen 1 , David Wei Zhang 3 , Peng Zhou 1
Affiliation
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Multibridge channel field-effect transistors (MBCFETs) enable improved gate control and flow of a large drive current and they are regarded as promising candidates for next-generation transistor architecture. However, in achieving a larger drive current with a thinner channel, limitations arise from the decrease in mobility when the thickness of the Si nanosheet is less than 5 nm. In addition, an increase in the leakage current is unavoidable when a large number of channels are stacked. Here, a 2D ultrathin MBCFET is demonstrate, constructed based on 2 nm/2 nm MoS2 channels. The normalized drive current (23.11 µA*µm µm−1) in each level channel of this MBCFET exceeds that of the latest seven-level-stacked Si MBCFET, while the leakage current is only 0.4% of this value, with the subthreshold swing reaching 60 mV dec−1 and an on/off ratio reaching up to 4 × 108 at room temperature. Furthermore, the drive current of this 2D ultrathin MBCFET can be further increased by regulating the polarity of the operation voltage to reduce the injection barrier. The combination of 2D materials and an MBC structure has the potential for use in high-performance and low-power-consumption electronics.
中文翻译：
由范德华装配实现的超薄多桥沟道晶体管
多桥沟道场效应晶体管 (MBCFET) 能够改进栅极控制和大驱动电流的流动，它们被认为是下一代晶体管架构的有希望的候选者。然而，在以更薄的通道实现更大的驱动电流时，当 Si 纳米片的厚度小于 5 nm 时，迁移率的降低会产生限制。此外，当大量通道堆叠时，漏电流的增加是不可避免的。在此，展示了基于 2 nm/2 nm MoS 2通道构建的 2D 超薄 MBCFET 。归一化驱动电流 (23.11 µA*µm µm -1) 在该 MBCFET 的每个电平通道中都超过了最新的七级堆叠 Si MBCFET，而漏电流仅为该值的 0.4%，亚阈值摆幅达到 60 mV dec -1，开/关比达到在室温下可达 4 × 10 8。此外，这种二维超薄 MBCFET 的驱动电流可以通过调节工作电压的极性来进一步增加，以降低注入势垒。2D 材料和 MBC 结构的组合具有用于高性能和低功耗电子产品的潜力。
更新日期：2021-09-14
中文翻译：
由范德华装配实现的超薄多桥沟道晶体管
多桥沟道场效应晶体管 (MBCFET) 能够改进栅极控制和大驱动电流的流动，它们被认为是下一代晶体管架构的有希望的候选者。然而，在以更薄的通道实现更大的驱动电流时，当 Si 纳米片的厚度小于 5 nm 时，迁移率的降低会产生限制。此外，当大量通道堆叠时，漏电流的增加是不可避免的。在此，展示了基于 2 nm/2 nm MoS 2通道构建的 2D 超薄 MBCFET 。归一化驱动电流 (23.11 µA*µm µm -1) 在该 MBCFET 的每个电平通道中都超过了最新的七级堆叠 Si MBCFET，而漏电流仅为该值的 0.4%，亚阈值摆幅达到 60 mV dec -1，开/关比达到在室温下可达 4 × 10 8。此外，这种二维超薄 MBCFET 的驱动电流可以通过调节工作电压的极性来进一步增加，以降低注入势垒。2D 材料和 MBC 结构的组合具有用于高性能和低功耗电子产品的潜力。
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