Depositions of the dielectric thin-films at low temperatures without greenhouse gas, nitrous oxide (N\(_{2}\)O) is one of the most critical challenges in modern technologies for microelectronics, optoelectronics, and nanoelectronics. The present study demonstrates that thin dielectric layers deposit by inductively-coupled plasma-enhanced chemical vapor deposition (ICPECVD) technology at lower temperatures (\(< 300\,^{\circ }\)C) can be successfully optimized and has the potential to reduce the environmental impact significantly. A particular focus is made on the improvement of the optical properties that are strongly correlated to the physicochemical bonds film properties. Typical deposition rates range from 10 to 20 nm/min, depending mainly on power, pressure, and gas flows. This study opens up large scale applications that require lower hydrogen content and a stable process. The presented results emphasize green manufacturing technologies and can be valuable for a wide range of applications using a complementary metal-oxide-semiconductor (CMOS)-compatible technology.

在没有温室气体的低温下沉积电介质薄膜，一氧化二氮 (N \(_{2}\) O) 是现代微电子、光电子和纳米电子技术中最关键的挑战之一。本研究表明，通过电感耦合等离子体增强化学气相沉积 (ICPECVD) 技术在较低温度 ( \(< 300\,^{\circ }\)C) 可以成功优化并有可能显着减少对环境的影响。特别关注与物理化学键膜特性密切相关的光学特性的改进。典型的沉积速率范围为 10 到 20 nm/min，主要取决于功率、压力和气体流量。这项研究开辟了需要较低氢含量和稳定过程的大规模应用。所呈现的结果强调绿色制造技术，并且对于使用互补金属氧化物半导体 (CMOS) 兼容技术的广泛应用具有价值。