Understanding charge transport mechanisms in thin-film transistors based on random networks of single-wall carbon nanotubes (SWCNT-TFTs) is essential for further advances to improve the potential for various nanoelectronic applications. Herein, a comprehensive investigation of the two-dimensional (2D) charge transport mechanism in SWCNT-TFTs is reported by analyzing the temperature-dependent electrical characteristics determined from the direct-current and non-quasi-static transient measurements at 80–300 K. To elucidate the time-domain charge transport characteristics of the random networks in the SWCNTs, an empirical equation was derived from a theoretical trapping model, and a carrier velocity distribution was determined from the differentiation of the transient response. Furthermore, charge trapping and de-trapping in shallow- and deep-traps in SWCNT-TFTs were analyzed by investigating charge transport based on their trapping/de-trapping rate. The comprehensive analysis of this study provides fundamental insights into the 2D charge transport mechanism in TFTs based on random networks of nanomaterial channels.

了解基于单壁碳纳米管 (SWCNT-TFT) 随机网络的薄膜晶体管中的电荷传输机制对于进一步提高各种纳米电子应用的潜力至关重要。在此，通过分析由 80-300 K 的直流和非准静态瞬态测量确定的温度相关电特性，报告了对 SWCNT-TFT 中二维 (2D) 电荷传输机制的综合研究。为了阐明 SWCNT 中随机网络的时域电荷传输特性，从理论俘获模型中推导出经验方程，并从瞬态响应的微分中确定载流子速度分布。此外，通过研究基于俘获/解俘率的电荷传输，分析了 SWCNT-TFT 中浅陷阱和深陷阱中的电荷俘获和解俘。这项研究的综合分析为基于纳米材料通道随机网络的 TFT 中的 2D 电荷传输机制提供了基本见解。