Mxenes, an emerging class of two-dimensional materials, have attracted extensive attention due to their unique electronic properties. One of the MXenes that has been successfully synthesized recently is vanadium carbide MXene. In this work, this new member of MXenes, V₂C, was applied as the active layers of memristors involving Ag and W electrodes. The transition from threshold switching to resistive switching was found in the V₂C-based memristors which could be achieved via tuning compliance current. The essence of the switching mechanisms was assumed to be the diffusion process of Ag ions. This process can functionally resemble Ca²⁺ dynamics in synaptic transmission. Together with a positive analog behavior observed, the coexistence of the threshold and resistive switching mechanisms eventually allowed the V₂C-based memristors to emulate various synaptic functions. Furthermore, the study of intrinsic frequency dependence of the V₂C memristor also indicated that both spike-timing-dependent plasticity (STDP) and spike-rate-dependent plasticity (SRDP) could be achieved on a single V₂C memristor without complex pulse engineering or spike overlapping, which may dramatically reduce the complexity of both circuit and algorithm design. The V₂C-based memristors thus show great potential to promote the efficiency and scalability of brain-inspired computing systems in the future by simplifying the artificial synapses design.

Mxenes是一类新兴的二维材料，由于其独特的电子特性而引起了广泛的关注。最近成功合成的MXene之一是碳化钒MXene。在这项工作中，MXenes 的这个新成员 V ₂ C 被用作涉及 Ag 和 W 电极的忆阻器的有源层。在基于 V ₂ C 的忆阻器中发现了从阈值切换到电阻切换的转变，这可以通过调整顺从电流来实现。假设转换机制的本质是银离子的扩散过程。这个过程在功能上类似于 Ca ²⁺突触传递的动力学。连同观察到的正模拟行为，阈值和电阻切换机制的共存最终允许基于 V ₂ C 的忆阻器模拟各种突触功能。此外，对 V ₂ C 忆阻器固有频率依赖性的研究还表明，在没有复杂脉冲的情况下，可以在单个 V ₂ C 忆阻器上实现尖峰定时依赖性可塑性（STDP）和尖峰速率依赖性可塑性（SRDP）。工程或尖峰重叠，这可能会大大降低电路和算法设计的复杂性。V ₂因此，基于 C 的忆阻器通过简化人工突触设计，在未来提高仿脑计算系统的效率和可扩展性方面显示出巨大的潜力。