Silicon-carbon films were synthesized by electrochemical deposition from methanol/ethanol and hexamethyldisilazane solution. SEM studies have shown that samples with manganese and those obtained from the methanol-based electrolyte are distinguished by the presence of three-dimensional agglomerates on the surface, while the morphology of films obtained from ethanol-based solution is more uniform. Raman studies confirm the formation of silicon-carbon bonds and the effect of manganese addition on the film structure. Electrochemical behavior was studied using the Mott-Schottky analysis. The plots of all samples contain linear sections with both positive and negative slopes, which indicates n-type and p-type semiconductor behavior The highest charge carrier density was found in the “pure” silicon-carbon films obtained from the methanol-based solution. The Bode plots showed a mix of resistive and capacitive behavior and they do not change much with the type of the sample and electrolyte concentration.

用甲醇/乙醇和六甲基二硅氮烷溶液电化学沉积合成硅碳薄膜。SEM 研究表明，含锰样品和从甲醇基电解液获得的样品的区别在于表面存在三​​维团块，而从乙醇基溶液获得的薄膜形态更均匀。拉曼研究证实了硅碳键的形成以及锰添加对薄膜结构的影响。使用莫特-肖特基分析来研究电化学行为。所有样品的图都包含具有正斜率和负斜率的线性部分，这表明 n 型和 p 型半导体行为 从甲醇溶液获得的“纯”硅碳膜中发现了最高的电荷载流子密度。