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Structural and optical properties, electrochemical impedance spectroscopy, and Mott–Schottky analysis of ZnFe2O4 nanoparticle-decorated V2O5 rectangular nanosheets for photoelectrochemical applications
Journal of Environmental Chemical Engineering ( IF 7.4 ) Pub Date : 2021-07-30 , DOI: 10.1016/j.jece.2021.106131
I. Neelakanta Reddy 1 , V. Manjunath 2 , Jaesool Shim 1
Affiliation  

Herein, efficient ZnFe2O4 nanoparticle (NP)-decorated V2O5 nanostructure photocatalysts were synthesized for photoelectrochemical applications, and their crystalline structure, morphology, and optical properties of the synthesized samples were analyzed. The ZnFe2O4 NP decoration over the V2O5 nanostructure surface significantly influenced the optical properties with the optical bandgap varying from 2.12 to 2.20 eV. The charge-transfer kinetics were investigated through electrochemical impedance spectroscopy. The ZnFe2O4 NP-decorated V2O5 nanostructures exhibited the lowest charge-transfer resistance of 4.69 KΩ and maximum photocurrent density of ~0.17 × 10-3 A cm-2 in the light state, which is six times higher than that of pure V2O5 nanostructures. Further, Mott–Schottky (M–S) analysis was performed at fixed frequencies, which significantly influenced the flat potentials and carrier densities owing to the ZnFe2O4 NP decoration.



中文翻译:

用于光电化学应用的 ZnFe2O4 纳米颗粒装饰的 V2O5 矩形纳米片的结构和光学性质、电化学阻抗谱和莫特-肖特基分析

在此,合成了用于光电化学应用的高效 ZnFe 2 O 4纳米粒子 (NP) 修饰的 V 2 O 5纳米结构光催化剂,并分析了合成样品的晶体结构、形貌和光学性质。V 2 O 5纳米结构表面上的ZnFe 2 O 4 NP装饰显着影响光学性质,光学带隙从2.12到2.20eV变化。通过电化学阻抗谱研究电荷转移动力学。ZnFe 2 O 4 NP修饰的V 2 O 5纳米结构在光状态下表现出最低的电荷转移电阻为 4.69  KΩ,最大光电流密度为~0.17 × 10 -3  A  cm -2,是纯 V 2 O 5纳米结构的六倍。此外,莫特-肖特基 (M-S) 分析在固定频率下进行,由于 ZnFe 2 O 4 NP 装饰,这显着影响了平面电位和载流子密度。

更新日期:2021-08-01
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