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Energy-carrying wave simulation of the Lonngren-wave equation in semiconductor materials
International Journal of Modern Physics B ( IF 2.6 ) Pub Date : 2021-07-31 , DOI: 10.1142/s0217979221502131
Hülya Durur 1
Affiliation  

In this study, the Lonngren-wave equation, which is physically semiconductor, is taken into consideration. Traveling wave solutions of this equation are presented with generalized exponential rational function method, which is one of the mathematically powerful analytical methods. These solutions are produced in bright (non-topological) soliton and complex trigonometric-type traveling wave solutions. Three-dimensional (3D), 2D and contour graphics are presented with the help of a ready-made package program with special values given to constants in these solutions. The effect of the change in wave velocity on the traveling wave solution showing energy transport is presented with the help of simulation. It is argued that velocity is one of the important factors in wave diffraction. In the results and discussion section, the advantages and disadvantages of the method are discussed.

中文翻译:

半导体材料中朗格伦波方程的载能波模拟

在这项研究中,考虑了物理半导体的朗格伦波动方程。该方程的行波解采用广义指数有理函数法求解,是数学上强大的解析方法之一。这些解决方案是在明亮(非拓扑)孤子和复杂的三角型行波解决方案中产生的。借助现成的软件包程序呈现三维 (3D)、2D 和轮廓图形,这些解决方案中的常量具有特殊值。在模拟的帮助下,给出了波速变化对显示能量传输的行波解的影响。有人认为,速度是波衍射的重要因素之一。在结果和讨论部分,
更新日期:2021-07-31
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