0D Bismuth nanoparticles (Bi NPs) are grown on the surface of 2D few-layer Nb₂CT_x MXene to form the mixed-dimensional Nb₂CT_x@Bi Schottky heterojunction. The large surface to volume area characteristic of 2D Nb₂CT_x nanosheets can provide the sufficient sites for the growth of Bi NPs, which can not only prevent the aggregation of Bi NPs, but also effectively shorten the length and transmission time of charge transfer. The Schottky heterojunction generated at the interface could lead to the uniflow spreading process of electrons/holes, promotes the separation of photo-induced electron/hole pairs, and suppress the carrier recombination dynamics, thus leading to the enhanced performance of Nb₂CT_x@Bi-based optoelectronic devices. Systematic investigations demonstrate that Nb₂CT_x@Bi-based flexible photoelectrochemical (PEC)-type photodetector shows self-powered photodetection capability with fast response/recovery time (0.08/0.08 s), a photocurrent of 1.56 μA cm⁻², a responsivity of 585.25 μA W⁻¹, and a specific detectivity of 4.63 × 10¹² Jones. The photodetector exhibits self-powered capability after bending 180° for 1000 cycles. Additionally, the repeatable and reproducible ON/OFF signals can be detected after placing the photodetector in alkaline electrolyte for one month, suggesting the potential of Nb₂CT_x@Bi Schottky heterojunctions for practical applications in flexible optoelectronics.

0D 铋纳米颗粒 (Bi NPs) 生长在 2D几层Nb ₂ CT _x MXene的表面上，形成混合维 Nb ₂ CT _x @Bi Schottky 异质结。2D Nb ₂ CT _x的大比表面积特性纳米片可以为Bi NPs的生长提供足够的位点，不仅可以防止Bi NPs的聚集，还可以有效缩短电荷转移的长度和传输时间。界面处产生的肖特基异质结可以导致电子/空穴的单向扩散过程，促进光生电子/空穴对的分离，抑制载流子复合动力学，从而提高Nb ₂ CT _x @的性能双基光电器件。系统研究表明 Nb ₂ CT _x@Bi 基柔性光电化学（PEC）型光电探测器显示出自供电光电探测能力，响应/恢复时间快（0.08/0.08 s），光电流为 1.56 μA cm ^-2，响应度为 585.25 μA W ^-1，以及比探测率为 4.63 × 10 ¹² Jones。光电探测器在弯曲 180° 1000 次循环后表现出自供电能力。此外，将光电探测器在碱性电解质中放置一个月后，可以检测到可重复和可再现的开/关信号，这表明 Nb ₂ CT _x @Bi 肖特基异质结在柔性光电领域的实际应用中具有潜力。