We propose a novel 4J InGaP/InGaAs-GaAsP MQW/InGaAsNSb/Ge solar cell design, which can provide optimum efficiency under the influence of space irradiation. Under 1-sun AM0 spectrum, the device efficiency is obtained to be 40 %. The impact of carrier removal and deep level traps on the device parameters (J_sc, V_oc, and η) is mainly emphasized in this paper. Using APSYS from crosslight Inc, the trap related parameters are defined for each trap concentration from 1 × 10¹³ cm⁻³ to 1 × 10¹⁸ cm⁻³. The multiple quantum wells (MQW) inserted in the intrinsic region of the GaAs p-i-n subcell provided a strong electric field for carrier collection. The visualization of carrier removal effect on device electric field became possible using 3D surface and 2D contour plots. Finally, we present EQE of each subcell, peak efficiency value, and maximum power for the proposed device. With the inclusion of 1 × 10⁴ cm/s surface recombination velocity, 1 × 10¹⁶ cm⁻³ trap concentration, 1 × 10¹⁶ cm⁻³ background doping in the MQW intrinsic region, the peak efficiency is obtained to be 46 % at 600 sun concentration.

我们提出了一种新颖的 4J InGaP/InGaAs-GaAsP MQW/InGaAsNSb/Ge 太阳能电池设计，它可以在空间辐射的影响下提供最佳效率。在 1-sun AM0 光谱下，器件效率达到 40%。本文主要强调载流子去除和深能级陷阱对器件参数（J _sc、V _oc和η）的影响。使用来自 crosslight Inc 的 APSYS，为从 1 × 10 ¹³  cm ^-3到 1 × 10 ¹⁸  cm ^{-3 的}每个陷阱浓度定义陷阱相关参数. 插入 GaAs pin 子电池本征区的多个量子阱 (MQW) 为载流子收集提供了强电场。使用 3D 表面和 2D 等高线图可以可视化载流子去除对器件电场的影响。最后，我们展示了每个子电池的 EQE、峰值效率值和建议设备的最大功率。通过在 MQW 本征区中包含 1 × 10 ⁴  cm / s 表面复合速度、1 × 10 ¹⁶  cm ^-3陷阱浓度、1 × 10 ¹⁶  cm ^-3背景掺杂，在600 日光浓度。