We studied the impact of oxidizing pre-treatments (OPT) and post deposition annealing (PDA) on the passivation performance and the hydrogen distribution near the interface between crystalline silicon (c-Si) and hydrogenated amorphous silicon (a-Si:H), the critical functional region in Si heterojunction solar cells. The OPT prior to deposition of the a-Si:H layer consists of immersing the c-Si substrates into hydrogen peroxide solutions, which forms a silicon oxide interlayer. Spectroscopic ellipsometry (SE) indicates that slightly thicker a-Si:H layers result from OPT. The refractive index and the extinction coefficient are increased by inserting the oxide interlayers, suggesting that less deficient and denser a-Si:H layers can be formed. Under optimum conditions, OPT leads to at least 2-fold improvement of the effective photo-generated carrier lifetime. PDA at 200 °C further improves the passivation performance of samples with an interlayer. Hydrogen profiling with nuclear reaction analysis clarifies that higher hydrogen concentrations are present around the heterointerfaces of samples with an interlayer and that these hydrogen concentrations are maintained after PDA. Our results suggest that the oxide interlayer can suppress hydrogen desorption in the initial growth stage of high-quality a-Si:H layers and during subsequent PDA, resulting in excellent passivation performance.

我们研究了氧化预处理 (OPT) 和沉积后退火 (PDA) 对钝化性能和晶体硅 (c-Si) 和氢化非晶硅 (a-Si:H) 之间界面附近的氢分布的影响， Si异质结太阳能电池的关键功能区。沉积 a-Si:H 层之前的 OPT 包括将 c-Si 衬底浸入过氧化氢溶液中，形成氧化硅夹层。光谱椭偏仪 (SE) 表明 OPT 会产生稍厚的 a-Si:H 层。通过插入氧化物夹层增加了折射率和消光系数，这表明可以形成更少缺陷和更致密的 a-Si:H 层。在最佳条件下，OPT 导致有效光生载流子寿命至少提高 2 倍。PDA 在 200 °C 下进一步提高了带有夹层的样品的钝化性能。使用核反应分析进行的氢分析表明，在具有夹层的样品的异质界面周围存在更高的氢浓度，并且这些氢浓度在 PDA 后保持不变。我们的结果表明，在高质量 a-Si:H 层的初始生长阶段和随后的 PDA 期间，氧化物夹层可以抑制氢解吸，从而获得优异的钝化性能。使用核反应分析进行的氢分析表明，在具有夹层的样品的异质界面周围存在更高的氢浓度，并且这些氢浓度在 PDA 后保持不变。我们的结果表明，在高质量 a-Si:H 层的初始生长阶段和随后的 PDA 期间，氧化物夹层可以抑制氢解吸，从而获得优异的钝化性能。使用核反应分析进行的氢分析表明，在具有夹层的样品的异质界面周围存在更高的氢浓度，并且这些氢浓度在 PDA 后保持不变。我们的结果表明，在高质量 a-Si:H 层的初始生长阶段和随后的 PDA 期间，氧化物夹层可以抑制氢解吸，从而获得优异的钝化性能。