Among the most important components in complex and high-power mechatronic systems is the transistor. The High Electron Mobility Transistor (HEMT) is a technology under development. This paper presents the hybrid Reliability Based Design Optimization (RBDO) method applied to the HEMT technology in order to improve its performance and reliability. The execution of RBDO processes requires the development and coupling of two models: the finite element model using Comsol multiphysics® software and the RBDO model by Matlab® software. The first model is used to simulate the electro-thermomechanical behavior of components. The second model is used to solve the optimization problem by coupling with the first model. After the application of this process, it was possible to determine the optimal values of the design variables which allows optimizing the multiphysics behavior of the structure and the reliability level of the HEMT.

在复杂的大功率机电系统中，最重要的组件之一是晶体管。高电子迁移率晶体管 (HEMT) 是一项正在开发的技术。本文介绍了应用于 HEMT 技术的基于混合可靠性的设计优化 (RBDO) 方法，以提高其性能和可靠性。RBDO 过程的执行需要两个模型的开发和耦合：使用 Comsol multiphysics® 软件的有限元模型和使用 Matlab® 软件的 RBDO 模型。第一个模型用于模拟组件的电热机械行为。第二个模型用于通过与第一个模型耦合来解决优化问题。应用此流程后，