Atomically thin layered tungsten diselenide (WSe₂) has attracted tremendous research attention for its potential applications in next-generation electronics. This article reports the synthesis method of high-quality monolayer to trilayer WSe₂ by molten-salt-assisted chemical vapor deposition. With the optimization of different types of molten salts and depths of corundum boat, large trilayer WSe₂ films can be grown with domain size up to 80 µm for the first time. A systematic study of the electrical properties of the n-type field-effect transistor has been carried out based on WSe₂ with the above three different layer thicknesses. The trilayer WSe₂ devices exhibit higher drive current, mobility, on/off ratio, and lower contact resistance than both bilayer and monolayer counterparts. Moreover, short channel transistors using the trilayer WSe₂ with a channel length of 230 nm have been fabricated, exhibiting an excellent on/off ratio up to 10⁸ and a high current density of 187 µA/μm. This facile synthesis of high-quality large-area multilayer WSe₂ provides a pathway for future high-performance two-dimensional electronic devices.

中文翻译：

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基于 CVD 生长的大域三层 WSe2 的高性能 n 型晶体管

原子级薄层状二硒化钨 (WSe ₂ ) 因其在下一代电子产品中的潜在应用而引起了极大的研究关注。本文报道了熔盐辅助化学气相沉积法合成高质量单层到三层WSe ₂的方法。通过对不同类型熔盐和刚玉舟深度的优化，首次可以生长出畴尺寸高达 80 µm 的大型三层 WSe ₂薄膜。基于上述三种不同层厚的WSe ₂对n型场效应晶体管的电学特性进行了系统研究。三层WSe ₂器件表现出比双层和单层对应物更高的驱动电流、迁移率、开/关比和更低的接触电阻。此外，使用该三层短沟道晶体管WSE ₂具有230nm的沟道长度已被制成，在/表现出优异的关比高达10 ⁸和187的高电流密度μ A / μ米。这种高质量大面积多层WSe _{2 的}简便合成为未来的高性能二维电子设备提供了途径。