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High-performance n-type transistors based on CVD-grown large-domain trilayer WSe2
APL Materials ( IF 5.3 ) Pub Date : 2021-07-20 , DOI: 10.1063/5.0048983
Xin Wang 1 , Xinhang Shi 1 , Chengru Gu 1 , Qi Guo 1 , Honggang Liu 1 , Xuefei Li 1 , Yanqing Wu 1, 2
Affiliation  

Atomically thin layered tungsten diselenide (WSe2) has attracted tremendous research attention for its potential applications in next-generation electronics. This article reports the synthesis method of high-quality monolayer to trilayer WSe2 by molten-salt-assisted chemical vapor deposition. With the optimization of different types of molten salts and depths of corundum boat, large trilayer WSe2 films can be grown with domain size up to 80 µm for the first time. A systematic study of the electrical properties of the n-type field-effect transistor has been carried out based on WSe2 with the above three different layer thicknesses. The trilayer WSe2 devices exhibit higher drive current, mobility, on/off ratio, and lower contact resistance than both bilayer and monolayer counterparts. Moreover, short channel transistors using the trilayer WSe2 with a channel length of 230 nm have been fabricated, exhibiting an excellent on/off ratio up to 108 and a high current density of 187 µA/μm. This facile synthesis of high-quality large-area multilayer WSe2 provides a pathway for future high-performance two-dimensional electronic devices.

中文翻译:

基于 CVD 生长的大域三层 WSe2 的高性能 n 型晶体管

原子级薄层状二硒化钨 (WSe 2 ) 因其在下一代电子产品中的潜在应用而引起了极大的研究关注。本文报道了熔盐辅助化学气相沉积法合成高质量单层到三层WSe 2的方法。通过对不同类型熔盐和刚玉舟深度的优化,首次可以生长出畴尺寸高达 80 µm 的大型三层 WSe 2薄膜。基于上述三种不同层厚的WSe 2n型场效应晶体管的电学特性进行了系统研究。三层WSe 2器件表现出比双层和单层对应物更高的驱动电流、迁移率、开/关比和更低的接触电阻。此外,使用该三层短沟道晶体管WSE 2具有230nm的沟道长度已被制成,在/表现出优异的关比高达10 8和187的高电流密度μ A / μ米。这种高质量大面积多层WSe 2 的简便合成为未来的高性能二维电子设备提供了途径。
更新日期:2021-07-30
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