InAsSb/AlGaSb systems have potential in mid-wavelength infrared detection and laser fields. Thus, their heteroepitaxial crystal quality and heterointerface are of great importance. Herein, the quantum well structure based on InAs_0.8Sb_0.2/Al_0.2Ga_0.8Sb was grown by interruption with and without Sb₂ soaking methods by molecular beam epitaxy to optimize the interface quality and adjust the heterostructure strain. Narrow and well-defined satellite peaks in high-resolution x-ray diffraction patterns manifest good crystal quality of the sample with 15 s Sb₂ soaking interruption. The relaxation of sample A without Sb₂ soaking interruption is ∼23% calculated by the reciprocal space mappings, while there is no relaxation found in sample B with 15 s Sb₂ soaking. High-resolution transmission electron microscopy and energy-dispersive spectroscopy were carried out. They showed sharp and coherent heterointerfaces generated by adding interruptions with an Sb₂ overpressure before and after InAsSb layer growth. Furthermore, the atomic force microscopy images of a 5 × 5 μm² scan area show that the surface of sample B with Sb₂ soaking contains atomic steps with a root-mean-square roughness of 1.44 Å. The photoluminescence peaks of the samples located in the range of 3–4 µm show that these InAsSb/AlGaSb material systems have potential applications in mid-wavelength optoelectrical devices.

中文翻译：

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Sb2浸泡对应变InAs0.8Sb0.2/Al0.2Ga0.8Sb多量子阱界面的影响

InAsSb/AlGaSb 系统在中波长红外探测和激光领域具有潜力。因此，它们的异质外延晶体质量和异质界面非常重要。在此，基于InAs _0.8 Sb _0.2 /Al _0.2 Ga _0.8 Sb的量子阱结构通过分子束外延在有和没有Sb ₂浸泡方法的情况下中断生长，以优化界面质量并调整异质结构应变。高分辨率 X 射线衍射图中的窄且定义明确的卫星峰表明样品具有良好的晶体质量，具有 15 秒的 Sb ₂浸泡中断。不含 Sb ₂的样品 A 的弛豫通过倒易空间映射计算的浸泡中断约为 23%，而在具有 15 s Sb ₂浸泡的样品 B 中没有发现弛豫。进行了高分辨率透射电子显微镜和能量色散光谱。他们展示了通过在 InAsSb 层生长之前和之后添加 Sb ₂超压中断产生的尖锐和连贯的异质界面。此外，5 × 5 μ m ²扫描区域的原子力显微镜图像显示，经过 Sb ₂浸泡的样品 B 表面包含均方根粗糙度为 1.44 Å 的原子台阶。样品的光致发光峰位于 3–4 µ范围内m 表明这些 InAsSb/AlGaSb 材料系统在中波长光电器件中具有潜在的应用。