Femtosecond laser sulfur hyperdoped silicon (fs-hSi) is capable of absorbing photons in the infrared spectral range while simultaneously exhibiting negligible reflection. However, laser processing creates detrimental amorphous and polycrystalline silicon surface layers impairing electronic properties, especially reducing minority charge carrier lifetimes. This paper demonstrates how to selectively remove these disadvantageous layers by ion beam etching, while crystalline IR-absorbing silicon underneath is left. The increase in silicon crystallinity is quantified by laterally probing the fs-hSi samples with Raman spectroscopy.

中文翻译：

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使用离子束蚀刻在飞秒激光超掺杂黑硅中同时获得高结晶度和亚带隙吸收

飞秒激光硫超掺杂硅 (fs-hSi) 能够吸收红外光谱范围内的光子，同时反射可忽略不计。然而，激光加工会产生有害的非晶和多晶硅表面层，从而损害电子特性，尤其是减少少数电荷载流子的寿命。本文展示了如何通过离子束蚀刻选择性地去除这些不利层，而留下下面的晶体红外吸收硅。通过用拉曼光谱横向探测 fs-hSi 样品来量化硅结晶度的增加。