For large-area electronic applications, the mechanism of the leakage current in oxide-semiconductor thin-film transistors (TFTs) has become a critical issue. In this work, the impact of the irradiation location on the photo-leakage current of zinc oxide (ZnO) TFTs is investigated. The photo-leakage current of the ZnO TFTs is not only dependent on the light irradiation but it is also dependent on the parasitic capacitance between the drain electrode and the floating gate metal. The photo-leakage current of the source-half irradiation TFT is larger than that of the drain-half irradiation TFT. To explain this phenomenon, the profile of the electric potential and the electron concentration is analyzed by two-dimensional device simulation. It is found that the floating gate metal plays the dominant role in the photo-leakage current. This research provides insight into TFT structure optimization and high-performance TFT process development.

中文翻译：

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氧化锌薄膜晶体管辐照位置相关漏电流的机理分析

对于大面积电子应用，氧化物半导体薄膜晶体管 (TFT) 中的漏电流机制已成为一个关键问题。在这项工作中，研究了照射位置对氧化锌 (ZnO) TFT 光泄漏电流的影响。ZnO TFT 的光泄漏电流不仅取决于光照射，还取决于漏电极和浮栅金属之间的寄生电容。源半辐照TFT的漏光电流大于漏半辐照TFT的漏光电流。为了解释这种现象，通过二维器件模拟分析了电势和电子浓度的分布。发现浮栅金属在光泄漏电流中起主导作用。