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GaN-nanopillar-based light-emitting diodes directly grown on multi-crystalline Si substrates
Aip Advances ( IF 1.4 ) Pub Date : 2021-07-06 , DOI: 10.1063/5.0052379
Yuichi Sato 1 , Shingo Taniguchi 1 , Sora Saito 1 , Houyao Xue 1 , Tsubasa Saito 1
Affiliation  

For the first time, light-emitting diodes based on gallium nitride nanopillar crystals were prepared directly on a multi-crystalline silicon substrate, which is widely utilized in low-cost solar cells. Several double-hetero-p–n-junction structures were fabricated, and bright light emission was obtained from the diodes. In addition, white-light emission was observed in another diode. The multi-crystalline Si substrate can be added to a candidate substrate to realize practical, novel, large-area light-emitting devices.

中文翻译:

直接生长在多晶硅衬底上的基于 GaN 纳米柱的发光二极管

首次在多晶硅衬底上直接制备了基于氮化镓纳米柱晶体的发光二极管,广泛应用于低成本太阳能电池。制造了几种双异质 p-n 结结构,并从二极管获得了明亮的光发射。此外,在另一个二极管中观察到白光发射。多晶硅衬底可以添加到候选衬底中,以实现实用、新颖、大面积的发光器件。
更新日期:2021-07-30
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