In this study, morphological properties and Schottky diode application of mpg-C₃N₄ material were investigated. XRD, SEM and TEM analyzes of this material were performed. When the SEM image is examined, it is seen that mpg-C₃N₄ particles are coated on the surface homogeneously. The p-Si crystal was used as the base material and mesoporous graphitic carbon nitride material mpg-C₃N₄ was coated on the crystal with spin coating. Thus, reference and mpg-C₃N₄/p-Si heterojunctions were fabricated. Using the current-voltage (I–V) measurements of the diode, the ideality factory (n) and barrier height (Φ_b) values were calculated at the room temperature. These values of Ni/mpg-C₃N₄/p-Si/Al heterojunction diode were determined as n = 1.25 and Φ_b = 0.83 eV by the Thermionic Emission (TE) method. Furthermore diode parameters (n, Φ_b and series resistance (R_s) were determined with Cheung and Norde functions. Also capacity-voltage (C–V) measurements of this device were taken for different frequency values. Using this measurements carrier concentration (N_a), barrier heights (Φ_b), Fermi energy level (E_f) and diffusion potential (V_d) values were determined.

在这项研究中，研究了mpg-C ₃ N ₄材料的形态特性和肖特基二极管的应用。对该材料进行了 XRD、SEM 和 TEM 分析。当检查SEM图像时，可以看出mpg-C ₃ N ₄颗粒均匀地涂覆在表面上。以p- Si晶体为基材，在晶体上旋涂了介孔石墨碳氮化物材料mpg-C ₃ N ₄。因此，制造了参考异质结和mpg-C ₃ N ₄ / p -Si异质结。使用电流-电压 ( I–V) 二极管的测量值、理想工厂 ( n ) 和势垒高度 ( Φ _b ) 值是在室温下计算的。Ni/mpg-C ₃ N ₄ / p -Si/Al 异质结二极管的这些值 通过热电子发射 (TE) 方法确定为n  = 1.25 和Φ _b = 0.83 eV。此外，二极管参数 ( n, Φ _b和串联电阻 ( R _s ) 由 Cheung 和 Norde 函数确定。此外，该器件的容量-电压 ( C-V ) 测量值针对不同的频率值进行了测量。使用该测量值，载流子浓度（确定了 N _a )、势垒高度 ( Φ _b )、费米能级 ( E _f ) 和扩散势 ( V _d ) 值。