In this work, single crystals of TlIn1−xGaxSe₂ solid solutions were grown by the methods of zone recrystallization, technologies for the manufacture of strain gauges based on them were developed and the tensoresistive properties of these phases were studied, the coefficient of strain sensitivity was determined by the static method depending on the temperature, the magnitude of mechanical deformation and optical illumination. Revealing that the single crystals have a high strain sensitivity coefficient, by the variation of the composition, quantity of mechanical deformation and the optical illumination, it is possible to control the phase coefficients investigated tensosensitivity.

中文翻译：

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单晶 TlIn1−xGaxSe2 的张阻特性

在这项工作中，TlIn 单晶1-X镓X采用区域再结晶法生长Se ₂固溶体，开发了基于它们的应变片制造技术，研究了这些相的张阻特性，根据温度采用静态法测定应变敏感系数，机械变形和光学照明的大小。揭示了单晶具有较高的应变敏感性系数，通过改变成分、机械变形量和光学照明，可以控制所研究的相位系数的张敏感性。