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Dynamical phase error in interacting topological quantum memories
Physical Review Research ( IF 3.5 ) Pub Date : 2021-07-30 , DOI: 10.1103/physrevresearch.3.033105
L. Coopmans 1, 2 , S. Dooley 1 , I. Jubb 1 , K. Kavanagh 1, 3 , G. Kells 1
Affiliation  

A local Hamiltonian with topological quantum order (TQO) has a robust ground-state degeneracy that makes it an excellent quantum memory candidate. This memory can be corrupted however if part of the state leaves the protected ground-state manifold and returns later with a dynamically accrued phase error. Here we analyze how TQO suppresses this process and use this to quantify the degree to which spectral densities in different topological sectors are correlated. We provide numerical verification of our results by modeling an interacting p-wave superconducting wire.

中文翻译:

相互作用拓扑量子存储器中的动态相位误差

具有拓扑量子阶 (TQO) 的局部哈密顿算子具有强大的基态简并性,使其成为优秀的量子存储器候选者。然而,如果状态的一部分离开受保护的基态流形并稍后返回动态累积的相位误差,则该内存可能会损坏。在这里,我们分析了 TQO 如何抑制这个过程,并使用它来量化不同拓扑扇区中频谱密度的相关程度。我们通过对相互作用的p波超导线进行建模来对我们的结果进行数值验证。
更新日期:2021-07-30
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